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http://hdl.handle.net/1942/2323
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DC Field | Value | Language |
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dc.contributor.author | REMES, Zdenek | - |
dc.contributor.author | Kalish, R. | - |
dc.contributor.author | Uzan-Saguy, C. | - |
dc.contributor.author | Baskin, E. | - |
dc.contributor.author | NESLADEK, Milos | - |
dc.contributor.author | Koizumi, S. | - |
dc.date.accessioned | 2007-11-13T15:54:28Z | - |
dc.date.available | 2007-11-13T15:54:28Z | - |
dc.date.issued | 2003 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 199(1). p. 82-86 | - |
dc.identifier.issn | 0031-8965 | - |
dc.identifier.uri | http://hdl.handle.net/1942/2323 | - |
dc.description.abstract | DC photo-conductivity and photo-Hall effect measurements were applied for the first time to measure electron transport properties of two 2-4 x 10(18) cm(-3) P-doped n-type diamonds at low temperatures down to 10 K. The low IR photosensitivity, sub-linear variation of free-electron concentration with IR light intensity as well as their freeze-out at very low temperatures were observed and explained by the presence of non-uniformly distributed defect-induced localized states (traps) in the band gap. Electron mobilities of the order of 400-500 cm(2)/Vs were measured at 10 K decreasing with increasing temperature as T-1/2 to about 150-200 cm(2)/Vs at 300 K, in contrast to T-3/2 law expected for ionized impurity scattering. Lattice distortions extending to several nm around P atoms are discussed as possible scattering centers. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 86 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 82 | - |
dc.identifier.volume | 199 | - |
local.format.pages | 5 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel. Acad Sci Czech Republ, Inst Phys, Prague 16200 6, Czech Republic. Inst Mat Res, B-3590 Diepenbeek, Belgium. Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan.Remes, Z, Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel. | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1002/pssa.200303802 | - |
dc.identifier.isi | 000185422000016 | - |
item.fullcitation | REMES, Zdenek; Kalish, R.; Uzan-Saguy, C.; Baskin, E.; NESLADEK, Milos & Koizumi, S. (2003) Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures. In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 199(1). p. 82-86. | - |
item.validation | ecoom 2004 | - |
item.contributor | REMES, Zdenek | - |
item.contributor | Kalish, R. | - |
item.contributor | Uzan-Saguy, C. | - |
item.contributor | Baskin, E. | - |
item.contributor | NESLADEK, Milos | - |
item.contributor | Koizumi, S. | - |
item.fulltext | No Fulltext | - |
item.accessRights | Closed Access | - |
crisitem.journal.issn | 0031-8965 | - |
crisitem.journal.eissn | 1862-6319 | - |
Appears in Collections: | Research publications |
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