Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2325
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dc.contributor.authorSoussan, P-
dc.contributor.authorLEKENS, Geert-
dc.contributor.authorDREESEN, Raf-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorBeyne, E-
dc.date.accessioned2007-11-13T15:57:09Z-
dc.date.available2007-11-13T15:57:09Z-
dc.date.issued2003-
dc.identifier.citationMICROELECTRONICS RELIABILITY, 43(9-11). p. 1785-1790-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/2325-
dc.description.abstractAn in-situ technique has been used to characterize Imec's MCM-D technology. This thin film technology dedicated to high frequency applications - uses exotic materials such as TaN and Ta2O5 for the resistors and the capacitors respectively. It was characterized at elevated temperature (up to 200degreesC), and it was possible to model the aging kinetics of the resistors and to use the high resolution measurements as a powerful analysis tool for the capacitors. With respect to conventional reliability testing, the in-situ technique was proven to be an efficient way to assess technology characterization and reliability; moreover, it gives the possibility to use short accelerated tests to perform lifetime prediction. (C) 2003 Elsevier Ltd. All rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleAdvantage of In-situ over Ex-situ techniques as reliability tool: Aging kinetics of Imec's MCM-D discrete passives devices.-
dc.typeJournal Contribution-
dc.identifier.epage1790-
dc.identifier.issue9-11-
dc.identifier.spage1785-
dc.identifier.volume43-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notesIMEC VZW, MCP, EDAS, B-3001 Louvain, Belgium. IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. XPEQT, B-3980 Tessenderlo, Belgium.Soussan, P, IMEC VZW, MCP, EDAS, Kapeldreef 75, B-3001 Louvain, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/S0026-2714(03)00301-9-
dc.identifier.isi000185791500072-
item.fulltextNo Fulltext-
item.contributorSoussan, P-
item.contributorLEKENS, Geert-
item.contributorDREESEN, Raf-
item.contributorDE CEUNINCK, Ward-
item.contributorBeyne, E-
item.accessRightsClosed Access-
item.fullcitationSoussan, P; LEKENS, Geert; DREESEN, Raf; DE CEUNINCK, Ward & Beyne, E (2003) Advantage of In-situ over Ex-situ techniques as reliability tool: Aging kinetics of Imec's MCM-D discrete passives devices.. In: MICROELECTRONICS RELIABILITY, 43(9-11). p. 1785-1790.-
item.validationecoom 2004-
crisitem.journal.issn0026-2714-
crisitem.journal.eissn1872-941X-
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