Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2327
Title: Aluminium nitride films deposition by reactive triode sputtering for surface acoustic wave device applications
Authors: MORTET, Vincent 
Vasin, A
Jouan, PY
Elmazria, O
Djouadi, MA
Issue Date: 2003
Publisher: ELSEVIER SCIENCE SA
Source: SURFACE & COATINGS TECHNOLOGY, 176(1). p. 88-92
Abstract: AlN thin films have been deposited by reactive triode sputtering. The effect of the nitrogen contents in the discharge on films stoichiometry and crystal orientation has been investigated. AlN films have been studied by means of Fourier-transform infrared spectroscopy, X-ray diffraction and Raman spectroscopy. Dense AlN layers with very high electrical resistivity, high index of refraction and large optical band gap were obtained at high deposition rates. Finally, the optimized films were applied for the synthesis of surface acoustic waves filters. Acoustic velocities up to 5130 in s(-1) for AlN/Si structure, 5548 m s(-1) for AlN/sapphire structure, and 9900 m s(-1) for AlN/diamond structure were obtained. (C) 2003 Elsevier B.V. All rights reserved.
Notes: UVHC, LAMAC, F-59600 Maubeuge, France. ENSAM, LABOMAP, F-71250 Cluny, France. Limburgs Univ Ctr, IMO, B-3590 Diepenbeek, Belgium. Univ Nancy 1, LPMIA, F-54506 Vandoeuvre Les Nancy, France. LPCM, Inst Mat, UMR 6502, F-44322 Nantes, France.Jouan, PY, UVHC, LAMAC, ZI Champ Abbesse, F-59600 Maubeuge, France.
Keywords: reactive sputtering; aluminium nitride; surface acoustic wave devices
Document URI: http://hdl.handle.net/1942/2327
ISSN: 0257-8972
e-ISSN: 1879-3347
DOI: 10.1016/S0257-8972(03)00018-5
ISI #: 000186472800011
Category: A1
Type: Journal Contribution
Validations: ecoom 2004
Appears in Collections:Research publications

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