Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/23465
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dc.contributor.authorCAROLUS, Jorne-
dc.contributor.authorDAENEN, Michael-
dc.date.accessioned2017-04-12T06:41:52Z-
dc.date.available2017-04-12T06:41:52Z-
dc.date.issued2016-
dc.identifier.citationSunday 2016, Veldhoven - Nederland, 23/11/2016-
dc.identifier.urihttp://hdl.handle.net/1942/23465-
dc.description.abstractPotential-induced degradation (PID) of photovoltaic (PV) modules may occur when high potential differences between the solar cell and the grounded frame are present. According to Naumann et al., the induced electrical field causes a leakage current and sodium ion (Na+) diffusion into stacking faults through the PN-junction of the solar cell, resulting in a substantial lowering of the shunt resistance.-
dc.language.isoen-
dc.titlePotential-induced degradation (PID); A test campaign at module level-
dc.typeConference Material-
local.bibliographicCitation.conferencedate2016, November 23-
local.bibliographicCitation.conferencenameSunday 2016-
local.bibliographicCitation.conferenceplaceVeldhoven - Nederland-
local.bibliographicCitation.jcatC2-
dc.relation.references S. Pingel et al., “Potential induced degradation of solar cells and panels.”  V. Naumann et al., “Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells.”-
local.type.refereedNon-Refereed-
local.type.specifiedConference Poster-
item.accessRightsClosed Access-
item.fullcitationCAROLUS, Jorne & DAENEN, Michael (2016) Potential-induced degradation (PID); A test campaign at module level. In: Sunday 2016, Veldhoven - Nederland, 23/11/2016.-
item.fulltextWith Fulltext-
item.contributorCAROLUS, Jorne-
item.contributorDAENEN, Michael-
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