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Title: | In-situ optical emission spectroscopy diagnostic of plasma ignition impact on crystalline silicon passivation by a-Si:H films | Authors: | Meddeb, Hosny Bearda, Twan Abdulraheem, Yaser Dimassi, Wissem Ezzaouia, Hatem GORDON, Ivan Szlufcik, Jozef POORTMANS, Jef |
Issue Date: | 2016 | Source: | SUPERLATTICES AND MICROSTRUCTURES, 96, p. 253-258 | Abstract: | The influence of the plasma ignition condition during PECVD deposition from a silane/hydrogen mixture on the amorphous silicon passivation of crystalline silicon surface is investigated. The changes in this process step mainly consist in varying the power density for very brief durations in between 1 s and 3 s. We find that the ignition phase contributes significantly in the film growth, especially in the a-Si:H/c-Si interface formation. In particular, the deposition rate increases with ignition power density. TEM cross-section inspection presents a rougher a-Si:H/c-Si interface with higher plasma power and thus, a tendency for nano-clusters formation caused by the crystalline nature of the substrate. In-situ plasma diagnostics reveal the gradual raise up of IHa*/ISiH* with the power density leading to worse SiH* abstraction to the surface. Whereas, time-resolved optical emission spectroscopy explains the possible recombination mechanism in the plasma due to higher-silane related reactive species (HSRS) formation via polymerization reactions. Our results point out that the ignition conditions with a rather low power for longer time give the best passivation, resulting an effective lifetime up to 9 ms. | Keywords: | plasma ignition; optical emission spectroscopy; PECVD; amorphous silicon; surface passivation | Document URI: | http://hdl.handle.net/1942/23981 | ISSN: | 0749-6036 | e-ISSN: | 1096-3677 | DOI: | 10.1016/j.spmi.2016.05.038 | ISI #: | 000383308700029 | Rights: | © 2016 Elsevier Ltd. All rights reserved. | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2017 |
Appears in Collections: | Research publications |
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