Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/23988
Title: Module-level Cell Processing of Silicon Heterojunction Interdigitated Back-Contacted (SHJ-IBC) Solar Cells with Efficiencies above 22%: Towards All-Dry Processing
Authors: Radhakrishnan, Hariharsudan Sivaramakrishnan
Bearda, Twan
Xu, Menglei
Jonnak, Shashi Kiran
Malik, Shuja
Hasan, Mahmudul
Depauw, Valerie
Filipic, Miha
Van Nieuwenhuysen, Kris
Abdulraheem, Yaser
Debucquoy, Maarten
Gordon, Ivan
Szlufcik, Jozef
POORTMANS, Jef 
Issue Date: 2016
Publisher: IEEE
Source: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), IEEE,p. 1182-1187
Series/Report: IEEE Photovoltaic Specialists Conference
Abstract: Module-level processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells while bonded to glass, in the so-called i2-module concept, is discussed. In this approach, a key challenge is the interdigitated patterning of aSi:H without compromising on the rear-surface passivation. Process adaptations involving more resistant bonding agents and a milder wet etchant enabled bonded cells with the best efficiency of 21.7% and VOC of 734 mV, which are the highest reported for bonded cells processed partially at module level, and which undoubtedly proves the potential of this i2-module concept to reach high Voc and efficiency. Yet another challenge is to make the process flow cost-effective and industrially-relevant, i.e. a lithofree, all-dry process flow, analogous to thin-film PV module fabrication. As a first step, dry etching of a-Si:H was developed to replace wet etching, and was successfully incorporated in a SHJIBC process flow to fabricate freestanding cells with the best efficiency of 22.9% and above 20% on thick (190 μm) and thin (56 μm) EVA-bonded silicon.
Notes: Radhakrishnan, HS (reprint author), IMEC, Leuven, Belgium.
Keywords: heterojunction solar cells; interdigitated backcontacted cells; amorphous silicon; charge carrier lifetime; surface passivation; module-level processing; bonding
Document URI: http://hdl.handle.net/1942/23988
ISBN: 9781509027248
DOI: 10.1109/PVSC.2016.7749801
ISI #: 000399818701042
Rights: ©2016 IEEE
Category: C1
Type: Proceedings Paper
Validations: ecoom 2018
Appears in Collections:Research publications

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