Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2399
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dc.contributor.authorREMES, Zdenek-
dc.contributor.authorUzan-Saguy, C.-
dc.contributor.authorBaskin, E.-
dc.contributor.authorKalish, R.-
dc.contributor.authorAvigal, Y.-
dc.contributor.authorNESLADEK, Milos-
dc.contributor.authorKoizumi, P.-
dc.date.accessioned2007-11-13T22:43:23Z-
dc.date.available2007-11-13T22:43:23Z-
dc.date.issued2004-
dc.identifier.citationDIAMOND AND RELATED MATERIALS, 13(4-8). p. 713-717-
dc.identifier.issn0925-9635-
dc.identifier.urihttp://hdl.handle.net/1942/2399-
dc.description.abstractResistivity and Hall effect measurements are applied to understand the electronic properties of homoepitaxially grown n- and p-type CVD diamond in the wide temperature range 10-900 K. To overcome the high dark resistivity at low temperature, carrier concentration is enhanced by photo-excitation. It is found that the lifetime of photo-excited carriers decreases significantly at low temperature whereas their mobility increases. It is suggested that the short lifetime and the continuous photo-excitation can lead to the non-equilibrium stationary distribution of the photo-excited carriers at low lattice temperature. The enhanced average kinetic energy of the photo-excited carriers can effectively reduce ionized impurity scattering hence increasing the carrier mobility. (C) 2003 Elsevier B.V. All rights reserved.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.subject.otherdiamond film; n-type doping; p-type doping; electrical properties characterization-
dc.titlePhoto-Hall effect measurements in P, N and B-doped diamond at low temperatures-
dc.typeJournal Contribution-
dc.identifier.epage717-
dc.identifier.issue4-8-
dc.identifier.spage713-
dc.identifier.volume13-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notesTechnion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel. Acad Sci Czech Republ, Inst Phys, Prague 16200 6, Czech Republic. Mat Res Inst, B-3590 Diepenbeek, Belgium. Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan.Remes, Z, Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel.remes@fzu.cz-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.diamond.2003.11.027-
dc.identifier.isi000221691100032-
item.fulltextNo Fulltext-
item.contributorREMES, Zdenek-
item.contributorUzan-Saguy, C.-
item.contributorBaskin, E.-
item.contributorKalish, R.-
item.contributorAvigal, Y.-
item.contributorNESLADEK, Milos-
item.contributorKoizumi, P.-
item.fullcitationREMES, Zdenek; Uzan-Saguy, C.; Baskin, E.; Kalish, R.; Avigal, Y.; NESLADEK, Milos & Koizumi, P. (2004) Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures. In: DIAMOND AND RELATED MATERIALS, 13(4-8). p. 713-717.-
item.accessRightsClosed Access-
item.validationecoom 2005-
crisitem.journal.issn0925-9635-
crisitem.journal.eissn1879-0062-
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