Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/2399
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | REMES, Zdenek | - |
dc.contributor.author | Uzan-Saguy, C. | - |
dc.contributor.author | Baskin, E. | - |
dc.contributor.author | Kalish, R. | - |
dc.contributor.author | Avigal, Y. | - |
dc.contributor.author | NESLADEK, Milos | - |
dc.contributor.author | Koizumi, P. | - |
dc.date.accessioned | 2007-11-13T22:43:23Z | - |
dc.date.available | 2007-11-13T22:43:23Z | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | DIAMOND AND RELATED MATERIALS, 13(4-8). p. 713-717 | - |
dc.identifier.issn | 0925-9635 | - |
dc.identifier.uri | http://hdl.handle.net/1942/2399 | - |
dc.description.abstract | Resistivity and Hall effect measurements are applied to understand the electronic properties of homoepitaxially grown n- and p-type CVD diamond in the wide temperature range 10-900 K. To overcome the high dark resistivity at low temperature, carrier concentration is enhanced by photo-excitation. It is found that the lifetime of photo-excited carriers decreases significantly at low temperature whereas their mobility increases. It is suggested that the short lifetime and the continuous photo-excitation can lead to the non-equilibrium stationary distribution of the photo-excited carriers at low lattice temperature. The enhanced average kinetic energy of the photo-excited carriers can effectively reduce ionized impurity scattering hence increasing the carrier mobility. (C) 2003 Elsevier B.V. All rights reserved. | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject.other | diamond film; n-type doping; p-type doping; electrical properties characterization | - |
dc.title | Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 717 | - |
dc.identifier.issue | 4-8 | - |
dc.identifier.spage | 713 | - |
dc.identifier.volume | 13 | - |
local.format.pages | 5 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel. Acad Sci Czech Republ, Inst Phys, Prague 16200 6, Czech Republic. Mat Res Inst, B-3590 Diepenbeek, Belgium. Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan.Remes, Z, Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel.remes@fzu.cz | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1016/j.diamond.2003.11.027 | - |
dc.identifier.isi | 000221691100032 | - |
item.fulltext | No Fulltext | - |
item.fullcitation | REMES, Zdenek; Uzan-Saguy, C.; Baskin, E.; Kalish, R.; Avigal, Y.; NESLADEK, Milos & Koizumi, P. (2004) Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures. In: DIAMOND AND RELATED MATERIALS, 13(4-8). p. 713-717. | - |
item.contributor | REMES, Zdenek | - |
item.contributor | Uzan-Saguy, C. | - |
item.contributor | Baskin, E. | - |
item.contributor | Kalish, R. | - |
item.contributor | Avigal, Y. | - |
item.contributor | NESLADEK, Milos | - |
item.contributor | Koizumi, P. | - |
item.accessRights | Closed Access | - |
item.validation | ecoom 2005 | - |
crisitem.journal.issn | 0925-9635 | - |
crisitem.journal.eissn | 1879-0062 | - |
Appears in Collections: | Research publications |
SCOPUSTM
Citations
9
checked on Sep 3, 2020
WEB OF SCIENCETM
Citations
6
checked on May 16, 2024
Page view(s)
60
checked on Sep 7, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.