Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/24007
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dc.contributor.authorVan Hoey, Olivier-
dc.contributor.authorSalavrakos, Alexia-
dc.contributor.authorMarques, Antonio-
dc.contributor.authorNagao, Alexandre-
dc.contributor.authorWillems, Ruben-
dc.contributor.authorVanhavere, Filip-
dc.contributor.authorCauwels, Vanessa-
dc.contributor.authorNascimento, Luana F.-
dc.date.accessioned2017-07-19T07:57:15Z-
dc.date.available2017-07-19T07:57:15Z-
dc.date.issued2016-
dc.identifier.citationRADIATION PROTECTION DOSIMETRY, 168(3), p. 314-321-
dc.identifier.issn0144-8420-
dc.identifier.urihttp://hdl.handle.net/1942/24007-
dc.description.abstractDuring the past years, several smartphone applications have been developed for radiation detection. These applications measure radiation using the smartphone camera complementary metal-oxide-semiconductor sensor. They are potentially useful for data collection and personal dose assessment in case of a radiological incident. However, it is important to assess these applications. Six applications were tested by means of irradiations with calibrated X-ray and gamma sources. It was shown that the measurement stabilises only after at least 10-25 min. All applications exhibited a flat dose rate response in the studied ambient dose equivalent range from 2 to 1000 mu Sv h(-1). Most applications significantly over- or underestimate the dose rate or are not calibrated in terms of dose rate. A considerable energy dependence was observed below 100 keV but not for the higher energy range more relevant for incident scenarios. Photon impact angle variation gave a measured signal variation of only about 10 %.-
dc.language.isoen-
dc.rights(c) The Author 2015. Published by Oxford University Press. All rights reserved-
dc.titleRadiation dosimetry properties of smartphone CMOS sensors-
dc.typeJournal Contribution-
dc.identifier.epage321-
dc.identifier.issue3-
dc.identifier.spage314-
dc.identifier.volume168-
local.bibliographicCitation.jcatA1-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.classdsPublValOverrule/author_version_not_expected-
local.classdsPublValOverrule/internal_author_not_expected-
local.classIncludeIn-ExcludeFrom-List/ExcludeFromFRIS-
dc.identifier.doi10.1093/rpd/ncv352-
dc.identifier.isi000371608200003-
item.validationecoom 2017-
item.fulltextWith Fulltext-
item.contributorVan Hoey, Olivier-
item.contributorSalavrakos, Alexia-
item.contributorMarques, Antonio-
item.contributorNagao, Alexandre-
item.contributorWillems, Ruben-
item.contributorVanhavere, Filip-
item.contributorCauwels, Vanessa-
item.contributorNascimento, Luana F.-
item.fullcitationVan Hoey, Olivier; Salavrakos, Alexia; Marques, Antonio; Nagao, Alexandre; Willems, Ruben; Vanhavere, Filip; Cauwels, Vanessa & Nascimento, Luana F. (2016) Radiation dosimetry properties of smartphone CMOS sensors. In: RADIATION PROTECTION DOSIMETRY, 168(3), p. 314-321.-
item.accessRightsRestricted Access-
crisitem.journal.issn0144-8420-
crisitem.journal.eissn1742-3406-
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