Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2406
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dc.contributor.authorHAENEN, Ken-
dc.contributor.authorNESLADEK, Milos-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorKravets, R-
dc.contributor.authorVanecek, M-
dc.contributor.authorKoizumi, S-
dc.date.accessioned2007-11-13T22:50:27Z-
dc.date.available2007-11-13T22:50:27Z-
dc.date.issued2004-
dc.identifier.citationDIAMOND AND RELATED MATERIALS, 13(11-12). p. 2041-2045-
dc.identifier.issn0925-9635-
dc.identifier.urihttp://hdl.handle.net/1942/2406-
dc.description.abstractThe application of very sensitive photocurrent-based spectroscopic techniques have led to the detection of new levels for the electronic structure of the phosphorous donor in n-type CVD diamond. By combining quasi-steady-state photocurrent measurements (PC), photothermal ionisation spectroscopy (PTIS) and the highly sensitive Fourier transform photocurrent spectroscopy (FTPS) technique at different temperatures, ranging from liquid nitrogen temperature to 170 K, the resulting spectra point to a richer structure than assumed up to now. This is the consequence of the improved sample quality over the last years, opening up to a much larger attainable doping window. By using doping levels, ranging from 10(19) cm(-3) down to 10(16) cm(-3) on { 111 }-oriented Ib. HPHT substrates, still giving rise to measurable n-type conductivity, spectra showed less line broadening and more fine structure. Finally, the results will be compared with spectra measured on active P-doped polycrystalline n-type films. (C) 2004 Elsevier B.V. All rights reserved.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.subject.othern-type doping; phosphorous; opto-electronic characterisation; electronic structure-
dc.titleThe phosphorous level fine structure in homoepitaxial and polycrystalline n-type CVD diamond-
dc.typeJournal Contribution-
dc.identifier.epage2045-
dc.identifier.issue11-12-
dc.identifier.spage2041-
dc.identifier.volume13-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notesLimburgs Univ Ctr, IMO, B-3590 Diepenbeek, Belgium. NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan. IMEC Vzw, Div IMOMEC, B-3590 Diepenbeek, Belgium. Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague 6, Czech Republic.Haenen, K, Limburgs Univ Ctr, IMO, Wetenschapspark 1, B-3590 Diepenbeek, Belgium.ken.haenen@luc.ac.be-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.diamond.2004.06.016-
dc.identifier.isi000225057300023-
item.validationecoom 2005-
item.fulltextNo Fulltext-
item.contributorHAENEN, Ken-
item.contributorNESLADEK, Milos-
item.contributorKoizumi, S-
item.contributorDE SCHEPPER, Luc-
item.contributorVanecek, M-
item.contributorKravets, R-
item.fullcitationHAENEN, Ken; NESLADEK, Milos; DE SCHEPPER, Luc; Kravets, R; Vanecek, M & Koizumi, S (2004) The phosphorous level fine structure in homoepitaxial and polycrystalline n-type CVD diamond. In: DIAMOND AND RELATED MATERIALS, 13(11-12). p. 2041-2045.-
item.accessRightsClosed Access-
crisitem.journal.issn0925-9635-
crisitem.journal.eissn1879-0062-
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