Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2422
Title: Effect of temperature and illumination on the electrical characteristics of polymer-fullerene bulk-heterojunction solar cells
Authors: Riedel, I
Parisi, J
Dyakonov, V
Hummelen, JC
LUTSEN, Laurence 
VANDERZANDE, Dirk 
Issue Date: 2004
Publisher: WILEY-V C H VERLAG GMBH
Source: ADVANCED FUNCTIONAL MATERIALS, 14(1). p. 38-44
Abstract: The current-voltage characteristics of ITO/PEDOT:PSS/OC1C10-PPV:PCBM/Al solar cells were measured in the temperature range 125-320 K under variable illumination, between 0.03 and 100 mW cm(-2) (white light), with the aim of determining the efficiency-limiting mechanism(s) in these devices, and the temperature and/or illumination range(s) in which these devices demonstrate optimal performance. (ITO: indium tin oxide; PEDOT:PSS: poly(styrene sulfonate)-doped poly(ethylene dioxythiophene); OC1C10-PPV: poly[2-methoxy-5-(3,7-dimethyl octyloxy)-1,4-phenylene vinylene]; PCBM: phenyl-C-61 butyric acid methyl ester.) The short-circuit current density and the fill factor grow monotonically with temperature until 320 K. This is indicative of a thermally activated transport of photogenerated charge carriers, influenced by recombination with shallow traps. A gradual increase of the open-circuit voltage to 0.91 V was observed upon cooling the devices down to 125 K. This fits the picture in which the open-circuit voltage is not limited by the work-function difference of electrode materials used. The overall effect of temperature on solar-cell parameters results in a positive temperature coefficient of the power conversion efficiency, which is 1.9% at T = 320 K and 100 mW cm(-2) (2.5% at 0.7 mW cm(-2)). The almost-linear variation of the short-circuit current density with light intensity confirms that the internal recombination losses are predominantly of monomolecular type under short-circuit conditions. We present evidence that the efficiency of this type of solar cell is limited by a light-dependent shunt resistance. Furthermore, the electronic transport properties of the absorber materials, e.g., low effective charge-carrier mobility with a strong temperature dependence, limit the photogenerated current due to a high series resistance, therefore the active layer thickness must be kept low, which results in low absorption for this particular composite absorber.
Notes: Univ Oldenburg, Fac 5, Lab Energy & Semicond Res, D-26129 Oldenburg, Germany. Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium. IMEC, IMOMEC Div, B-3590 Diepenbeek, Belgium. Univ Groningen, Mol Elect, MCS Plus, NL-9747 AG Groningen, Netherlands.Riedel, I, Univ Oldenburg, Fac 5, Lab Energy & Semicond Res, Carl Von Ossietzky Str 9-11, D-26129 Oldenburg, Germany.dyakonov@uni-oldenburg.de
Document URI: http://hdl.handle.net/1942/2422
ISSN: 1616-301X
e-ISSN: 1616-3028
DOI: 10.1002/adfm.200304399
ISI #: 000188857000006
Category: A1
Type: Journal Contribution
Validations: ecoom 2005
Appears in Collections:Research publications

Show full item record

SCOPUSTM   
Citations

388
checked on Sep 2, 2020

WEB OF SCIENCETM
Citations

435
checked on May 21, 2022

Page view(s)

66
checked on May 25, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.