Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/24317
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dc.contributor.authorKAMATCHI JOTHIRAMALINGAM, Sankaran-
dc.contributor.authorSrinivasu, K.-
dc.contributor.authorYeh, C. J.-
dc.contributor.authorThomas, J. P.-
dc.contributor.authorDRIJKONINGEN, Sien-
dc.contributor.authorPOBEDINSKAS, Paulius-
dc.contributor.authorSundaravel, B.-
dc.contributor.authorLeou, K. C.-
dc.contributor.authorLeung, K. T.-
dc.contributor.authorVAN BAEL, Marlies-
dc.contributor.authorSchreck, M.-
dc.contributor.authorLin, I. N.-
dc.contributor.authorHAENEN, Ken-
dc.date.accessioned2017-08-31T07:34:40Z-
dc.date.available2017-08-31T07:34:40Z-
dc.date.issued2017-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 110(26), p. 1-5 (Art N° 261602)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/1942/24317-
dc.description.abstractThe field electron emission (FEE) properties of nitrogen-incorporated nanocrystalline diamond films were enhanced due to Li-ion implantation/annealing processes. Li-ion implantation mainly induced the formation of electron trap centers inside diamond grains, whereas post-annealing healed the defects and converted the a-C phase into nanographite, forming conduction channels for effective transport of electrons. This resulted in a high electrical conductivity of 11.0 S/cm and enhanced FEE performance with a low turn-on field of 10.6 V/mu m, a high current density of 25.5 mA/cm(2) (at 23.2 V/mu m), and a high lifetime stability of 1,090 min for nitrogen incorporated nanocrystalline diamond films. Published by AIP Publishing.-
dc.description.sponsorshipThe authors like to thank the financial support of the Research Foundation Flanders (FWO) via Research Projects 12I8416N and 1519817N, and the Methusalem "NANO" network. K. J. Sankaran and P. Pobedinskas are Postdoctoral Fellows of the Research Foundation-Flanders (FWO). The Hercules Foundation Flanders is acknowledged for financial support of the Raman equipment.-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.rightsPublished by AIP Publishing-
dc.titleField electron emission enhancement in lithium implanted and annealed nitrogen-incorporated nanocrystalline diamond films-
dc.typeJournal Contribution-
dc.identifier.epage5-
dc.identifier.issue26-
dc.identifier.spage1-
dc.identifier.volume110-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notes[Sankaran, K. J.; Drijkoningen, S.; Pobedinskas, P.; Van Bael, M. K.; Haenen, K.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Sankaran, K. J.; Drijkoningen, S.; Pobedinskas, P.; Van Bael, M. K.; Haenen, K.] IMEC VZW, IMOMEC, B-3590 Diepenbeek, Belgium. [Srinivasu, K.; Yeh, C. J.; Leou, K. C.] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan. [Thomas, J. P.; Leung, K. T.] Univ Waterloo, WATLab, Waterloo, ON N2L 3G1, Canada. [Thomas, J. P.; Leung, K. T.] Univ Waterloo, Dept Chem, Waterloo, ON N2L 3G1, Canada. [Sundaravel, B.] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India. [Schreck, M.] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany. [Lin, I. N.] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan.-
local.publisher.placeMELVILLE-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr261602-
dc.identifier.doi10.1063/1.4990393-
dc.identifier.isi000404627700012-
item.fulltextWith Fulltext-
item.fullcitationKAMATCHI JOTHIRAMALINGAM, Sankaran; Srinivasu, K.; Yeh, C. J.; Thomas, J. P.; DRIJKONINGEN, Sien; POBEDINSKAS, Paulius; Sundaravel, B.; Leou, K. C.; Leung, K. T.; VAN BAEL, Marlies; Schreck, M.; Lin, I. N. & HAENEN, Ken (2017) Field electron emission enhancement in lithium implanted and annealed nitrogen-incorporated nanocrystalline diamond films. In: APPLIED PHYSICS LETTERS, 110(26), p. 1-5 (Art N° 261602).-
item.contributorKAMATCHI JOTHIRAMALINGAM, Sankaran-
item.contributorSrinivasu, K.-
item.contributorYeh, C. J.-
item.contributorThomas, J. P.-
item.contributorDRIJKONINGEN, Sien-
item.contributorPOBEDINSKAS, Paulius-
item.contributorSundaravel, B.-
item.contributorLeou, K. C.-
item.contributorLeung, K. T.-
item.contributorVAN BAEL, Marlies-
item.contributorSchreck, M.-
item.contributorLin, I. N.-
item.contributorHAENEN, Ken-
item.validationecoom 2018-
item.accessRightsOpen Access-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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