Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/24366
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dc.contributor.authorZhou, Yan-
dc.contributor.authorRAMANETI, Rajesh-
dc.contributor.authorAnaya, Julian-
dc.contributor.authorKorneychuk, Svetlana-
dc.contributor.authorDerluyn, Joff-
dc.contributor.authorSun, Huarui-
dc.contributor.authorPomeroy, James-
dc.contributor.authorVerbeeck, Johan-
dc.contributor.authorHAENEN, Ken-
dc.contributor.authorKuball, Martin-
dc.date.accessioned2017-09-06T09:23:03Z-
dc.date.available2017-09-06T09:23:03Z-
dc.date.issued2017-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 111(4), p. 1-5 (Art N° 041901)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/1942/24366-
dc.description.abstractPolycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (k(Dia)) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of k(Dia) in the measured 25-225 degrees C range. Device simulation using the experimental jDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD. Published by AIP Publishing.-
dc.description.sponsorshipThis work was in part supported by DARPA under Contract No. FA8650-15-C-7517, monitored by Dr. Avram Bar Cohen and Dr. John Blevins, and supported by Dr. Joseph Maurer and Dr. Abirami Sivananthan. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of DARPA. Y.Z. acknowledges China Scholarship Council for the financial support. S.K. and J.V. acknowledge the FWO-Vlaanderen for financial support under contract G.0044.13N "Charge ordering."-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.rights(c) Published by AIP Publishing.-
dc.titleThermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs-
dc.typeJournal Contribution-
dc.identifier.epage5-
dc.identifier.issue4-
dc.identifier.spage1-
dc.identifier.volume111-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notes[Zhou, Yan; Anaya, Julian; Sun, Huarui; Pomeroy, James; Kuball, Martin] Univ Bristol, CDTR, HH Wills Phys Lab, Tyndall Ave, Bristol BS8 1TL, Avon, England. [Ramaneti, Rajesh; Haenen, Ken] Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Ramaneti, Rajesh; Haenen, Ken] IMEC vzw, IMOMEC, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Korneychuk, Svetlana; Verbeeck, Johan] Univ Antwerp, Elect Microscopy Mat Sci EMAT, Groenenborgerlaan 171, B-2020 Antwerp, Belgium. [Derluyn, Joff] EpiGaN NV, Kempische Steenweg 293, B-3500 Hasselt, Belgium.-
local.publisher.placeMELVILLE-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr041901-
local.classdsPublValOverrule/author_version_not_expected-
dc.identifier.doi10.1063/1.4995407-
dc.identifier.isi000406779700008-
item.accessRightsOpen Access-
item.fullcitationZhou, Yan; RAMANETI, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; HAENEN, Ken & Kuball, Martin (2017) Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs. In: APPLIED PHYSICS LETTERS, 111(4), p. 1-5 (Art N° 041901).-
item.validationecoom 2018-
item.fulltextWith Fulltext-
item.contributorZhou, Yan-
item.contributorRAMANETI, Rajesh-
item.contributorAnaya, Julian-
item.contributorKorneychuk, Svetlana-
item.contributorDerluyn, Joff-
item.contributorSun, Huarui-
item.contributorPomeroy, James-
item.contributorVerbeeck, Johan-
item.contributorHAENEN, Ken-
item.contributorKuball, Martin-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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