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http://hdl.handle.net/1942/24389
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DC Field | Value | Language |
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dc.contributor.author | Bhattacharya, Gourav | - |
dc.contributor.author | KAMATCHI JOTHIRAMALINGAM, Sankaran | - |
dc.contributor.author | Srivastava, Shashi B. | - |
dc.contributor.author | Thomas, Joseph Palathinkal | - |
dc.contributor.author | Deshmukh, Sujit | - |
dc.contributor.author | POBEDINSKAS, Paulius | - |
dc.contributor.author | Singh, Samarendra P. | - |
dc.contributor.author | Leung, Kam Tong | - |
dc.contributor.author | VAN BAEL, Marlies | - |
dc.contributor.author | HAENEN, Ken | - |
dc.contributor.author | Roy, Susanta Sinha | - |
dc.date.accessioned | 2017-09-06T13:27:28Z | - |
dc.date.available | 2017-09-06T13:27:28Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | ELECTROCHIMICA ACTA, 246, p. 68-74 | - |
dc.identifier.issn | 0013-4686 | - |
dc.identifier.uri | http://hdl.handle.net/1942/24389 | - |
dc.description.abstract | One-dimensional diamond nanorods (DNRs) were fabricated from nanocrystalline diamond films using a facile combination of microwave plasma enhanced chemical vapor deposition and reactive ion etching (RIE) techniques. Structural and electrochemical properties of undoped and nitrogen doped DNRs were thoroughly investigated. A cyclic voltammetry study revealed the increase in density of charge carriers when doped with nitrogen. Mott Schottky analysis was implemented for the quantitative determination of the flat band potential, effective density of charge carriers and energy band diagram, which revealed that the undoped sample exhibit p-type behavior, whereas the nitrogen doped sample showed n-type behavior. Defect related damage due to graphitization and hydrogen termination in the undoped DNRs (during RIE) was correlated with the p-type conductivity. Nitrogen doping induces n-type conductivity and enhances effective density of charge carriers. (C) 2017 Elsevier Ltd. All rights reserved. | - |
dc.description.sponsorship | Gourav Bhattacharya, Shashi B. Srivastava and Sujit Deshmukh are indebted to Shiv Nadar University for providing scholarships. Kamatchi Jothiramalingam Sankaran and Paulius Pobedinskas are Postdoctoral Fellows of the Research Foundation-Flanders (FWO). The authors are also thankful for financial support from the Alexander von Humboldt Foundation for purchasing the contact angle measurement system and Mr. B. Ruttens, Ms. Hilde Pellaers and Prof. Jan D'Haen for technical and experimental assistance. The Hercules Foundation Flanders is acknowledged for financial support of the Raman equipment. | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.rights | © 2017 Elsevier Ltd. All rights reserved | - |
dc.subject.other | diamond nanorods; reactive ion etching; nitrogen doping; mott schotkky analysis | - |
dc.subject.other | diamond nanorods; reactive ion etching; nitrogen doping; mott schotkky analysis | - |
dc.title | Probing the flat band potential and effective electronic carrier density in vertically aligned nitrogen doped diamond nanorods via electrochemical method | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 74 | - |
dc.identifier.spage | 68 | - |
dc.identifier.volume | 246 | - |
local.format.pages | 7 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Bhattacharya, Gourav; Srivastava, Shashi B.; Deshmukh, Sujit; Singh, Samarendra P.; Roy, Susanta Sinha] Shiv Nadar Univ, Sch Nat Sci, Dept Phys, Gautam Buddha Nagar 201314, Uttar Pradesh, India. [Sankaran, Kamatchi Jothiramalingam; Pobedinskas, Paulius; Van Bael, Marlies K.; Haenen, Ken] Hasselt Univ, Inst Mat Res IMO, Diepenbeek, Belgium. [Sankaran, Kamatchi Jothiramalingam; Pobedinskas, Paulius; Van Bael, Marlies K.; Haenen, Ken] IMEC Vzw, IMOMEC, Diepenbeek, Belgium. [Thomas, Joseph Palathinkal; Leung, Kam Tong] Univ Waterloo, WATLab, Waterloo, ON N2L 3G1, Canada. [Thomas, Joseph Palathinkal; Leung, Kam Tong] Univ Waterloo, Dept Chem, Waterloo, ON N2L 3G1, Canada. | - |
local.publisher.place | OXFORD | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1016/j.electacta.2017.06.030 | - |
dc.identifier.isi | 000406942800009 | - |
item.validation | ecoom 2018 | - |
item.fulltext | With Fulltext | - |
item.fullcitation | Bhattacharya, Gourav; KAMATCHI JOTHIRAMALINGAM, Sankaran; Srivastava, Shashi B.; Thomas, Joseph Palathinkal; Deshmukh, Sujit; POBEDINSKAS, Paulius; Singh, Samarendra P.; Leung, Kam Tong; VAN BAEL, Marlies; HAENEN, Ken & Roy, Susanta Sinha (2017) Probing the flat band potential and effective electronic carrier density in vertically aligned nitrogen doped diamond nanorods via electrochemical method. In: ELECTROCHIMICA ACTA, 246, p. 68-74. | - |
item.accessRights | Restricted Access | - |
item.contributor | Bhattacharya, Gourav | - |
item.contributor | KAMATCHI JOTHIRAMALINGAM, Sankaran | - |
item.contributor | Srivastava, Shashi B. | - |
item.contributor | Thomas, Joseph Palathinkal | - |
item.contributor | Deshmukh, Sujit | - |
item.contributor | POBEDINSKAS, Paulius | - |
item.contributor | Singh, Samarendra P. | - |
item.contributor | Leung, Kam Tong | - |
item.contributor | VAN BAEL, Marlies | - |
item.contributor | HAENEN, Ken | - |
item.contributor | Roy, Susanta Sinha | - |
crisitem.journal.issn | 0013-4686 | - |
crisitem.journal.eissn | 1873-3859 | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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bhattacharya 1.pdf Restricted Access | Published version | 1.51 MB | Adobe PDF | View/Open Request a copy |
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