Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/24409
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSahayaraj, Sylvester-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorVERMANG, Bart-
dc.contributor.authorRanjbar, Samaneh-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorVleugels, Jef-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2017-09-07T12:03:51Z-
dc.date.available2017-09-07T12:03:51Z-
dc.date.issued2017-
dc.identifier.citationTHIN SOLID FILMS, 633(SI), p. 166-171-
dc.identifier.issn0040-6090-
dc.identifier.urihttp://hdl.handle.net/1942/24409-
dc.description.abstractThe influence of the duration of the KCN etching step on the efficiency of Cu2ZnSnSe4 (CZTSe) solar cells and Post deposition annealing (PDA) has been explored. CZTSe thin film absorbers prepared by selenization at 450 degrees C were etched by 5 wt% KCN/KOH from 30s up to 360 s before solar cell processing. KCN etching times above 120 s resulted in poor efficiencies. The fill factor (FF) and short circuit current density Jsc) of these devices were affected severely. After annealing the solar cells at 200 degrees C in N-2 atmosphere the best devices degraded and poor devices improved. Combined physical and optoelectronic characterization of the solar cells showed that PDA modifies the bulk defect density and also surface composition which reflects in the solar cell performance. (C) 2016 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThis research is partially funded by the Flemish government Department Economy, Science and innovation. This research has received funding from the European Union's Horizon 2020 - Research and Innovation Framework Programme under grant agreement No. 640868.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.rights© 2016 Elsevier B.V. All rights reserved.-
dc.subject.otherKCN solution; surface degradation; post deposition annealing; bulk defect density; wet etching; copper zinc tin selenide-
dc.subject.otherKCN solution; Surface degradation; Post deposition annealing; Bulk defect density; Wet etching; Copper zinc tin selenide-
dc.titleEffect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cells-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencedateMAY 02-06, 2016-
local.bibliographicCitation.conferencenameSymposium V on Thin Film Chalcogenide Photovoltaic Materials held at the 13th E-MRS Spring Meeting-
local.bibliographicCitation.conferenceplaceLille, FRANCE-
dc.identifier.epage171-
dc.identifier.issueSI-
dc.identifier.spage166-
dc.identifier.volume633-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notes[Brammertz, Guy; Meuris, Marc] Imec Div IMOMEC Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Sahayaraj, Sylvester; Brammertz, Guy; Ranjbar, Samaneh; Meuris, Marc; Poortmans, Jef] Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Sahayaraj, Sylvester; Vermang, Bart; Ranjbar, Samaneh; Poortmans, Jef] Imec Partner Solliance, Kapeldreef 75, B-3001 Leuven, Belgium. [Sahayaraj, Sylvester; Vermang, Bart; Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn ESAT, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium. [Ranjbar, Samaneh] Univ Aveiro, Dept Fis I3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal. [Vleugels, Jef] Katholieke Univ Leuven, Dept Mat Engn MTM, Kasteelpk Arenberg 44, B-3001 Heverlee, Belgium.-
local.publisher.placeLAUSANNE-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.type.programmeH2020-
local.relation.h2020640868-
dc.identifier.doi10.1016/j.tsf.2016.09.055-
dc.identifier.isi000404802300033-
item.validationecoom 2018-
item.fullcitationSahayaraj, Sylvester; BRAMMERTZ, Guy; VERMANG, Bart; Ranjbar, Samaneh; MEURIS, Marc; Vleugels, Jef & POORTMANS, Jef (2017) Effect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cells. In: THIN SOLID FILMS, 633(SI), p. 166-171.-
item.contributorSahayaraj, Sylvester-
item.contributorBRAMMERTZ, Guy-
item.contributorVERMANG, Bart-
item.contributorRanjbar, Samaneh-
item.contributorMEURIS, Marc-
item.contributorVleugels, Jef-
item.contributorPOORTMANS, Jef-
item.accessRightsRestricted Access-
item.fulltextWith Fulltext-
crisitem.journal.issn0040-6090-
crisitem.journal.eissn1879-2731-
Appears in Collections:Research publications
Files in This Item:
File Description SizeFormat 
sahayaraj 1.pdf
  Restricted Access		Published version1.15 MBAdobe PDFView/Open    Request a copy
Show simple item record

SCOPUSTM   
Citations

4
checked on Sep 5, 2020

WEB OF SCIENCETM
Citations

3
checked on May 8, 2024

Page view(s)

708
checked on Sep 5, 2022

Download(s)

96
checked on Sep 5, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.