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http://hdl.handle.net/1942/24855| Title: | P-N Junction Passivation in Kesterite Solar Cells by Use of Solution-Processed TiO2 Layer | Authors: | Ranjbar, Samaneh Hadipour, Afshin VERMANG, Bart Batuk, Maria Hadermann, Joke Garud, Siddhartha Sahayaraj, Sylvester MEURIS, Marc BRAMMERTZ, Guy da Cunha, Antonio F. POORTMANS, Jef |
Issue Date: | 2017 | Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Source: | IEEE JOURNAL OF PHOTOVOLTAICS, 7(4), p. 1130-1135 | Abstract: | In this work, we used a solution-processed TiO2 layer between Cu2ZnSnSe4 and CdS buffer layer to reduce the recombination at the p-n junction. Introducing the TiO2 layer showed a positive impact on VOC but fill factor and efficiency decreased. Using a KCN treatment, we could create openings in the TiO2 layer, as confirmed by transmission electron microscopy measurements. Formation of these openings in the TiO2 layer led to the improvement of the short-circuit current, fill factor, and the efficiency of the modified solar cells. | Notes: | [Ranjbar, Samaneh; Hadipour, Afshin; Vermang, Bart; Garud, Siddhartha; Sahayaraj, Sylvester; Poortmans, Jef] Imec Partner Solliance, B-3001 Leuven, Belgium. [Ranjbar, Samaneh; Vermang, Bart; Garud, Siddhartha; Sahayaraj, Sylvester; Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium. [Ranjbar, Samaneh; Vermang, Bart; Garud, Siddhartha; Sahayaraj, Sylvester; Meuris, Marc; Brammertz, Guy; Poortmans, Jef] IMEC, Div IMOMEC Partner Solliance, B-3590 Diepenbeek, Belgium. [da Cunha, Antonio F.] Univ Aveiro, Dept Fis, I3N, P-3810193 Aveiro, Portugal. [Vermang, Bart; Sahayaraj, Sylvester; Meuris, Marc; Brammertz, Guy; Poortmans, Jef] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Batuk, Maria] Univ Antwerp, Electron Microscopy Mat Sci, B-2020 Antwerp, Belgium. [Garud, Siddhartha] Delft Univ Technol, NL-2628 CD Delft, Netherlands. | Keywords: | Cu2ZnSnSe4 (CZTSe); kesterite solar cells; p-n junction passivation; solution-processed TiO2;Cu2ZnSnSe4 (CZTSe); kesterite solar cells; p-n junction passivation; solution-processed TiO2 | Document URI: | http://hdl.handle.net/1942/24855 | ISSN: | 2156-3381 | e-ISSN: | 2156-3403 | DOI: | 10.1109/JPHOTOV.2017.2692208 | ISI #: | 000404258900026 | Rights: | © 2017 IEEE. Personal use is permitted, but republication/ redistribution requires IEEE permission | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2018 |
| Appears in Collections: | Research publications |
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