Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2510
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dc.contributor.authorARESU, Stefano-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorDREESEN, Raf-
dc.contributor.authorCROES, Kristof-
dc.contributor.authorANDRIES, Ellen-
dc.contributor.authorMANCA, Jean-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorDEGRAEVE, Maria-
dc.contributor.authorKaczer, B.-
dc.contributor.authorD'OLIESLAEGER, Marc-
dc.contributor.authorD'HAEN, Jan-
dc.date.accessioned2007-11-15T09:08:37Z-
dc.date.available2007-11-15T09:08:37Z-
dc.date.issued2002-
dc.identifier.citationMICROELECTRONICS RELIABILITY, 42(9-11). p. 1485-1489-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/2510-
dc.description.abstractIn order to study in detail the kinetics of degradation at ultra low voltages, close to real life operating condition, SILC on ultra-thin SiO2 oxides was measured in-situ by using a high-resolution measurement technique. A large gate stress voltage range was measured from -3.1 V down to -1.5 V with a step of 0.2 V. Although the SILC-curves at low voltages show a different behaviour, no significant change in the degradation mechanisms could be observed proving that extrapolations of high voltage measurements to operating voltage are indeed possible, provided that the correct extrapolation model is used. (C) 2002 Elsevier Science Ltd. All rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleHigh-resolution SILC measurements of thin SiO2 ultra low voltages-
dc.typeJournal Contribution-
dc.identifier.epage1489-
dc.identifier.issue9-11-
dc.identifier.spage1485-
dc.identifier.volume42-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notesIMOMEC, IMEC Div, B-3590 Diepenbeek, Belgium. Limburgs Univ Ctr, Mat Res Inst, B-3590 Diepenbeek, Belgium. IMEC, B-3001 Heverlee, Belgium.Aresu, S, IMOMEC, IMEC Div, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/S0026-2714(02)00175-0-
dc.identifier.isi000178889900046-
item.accessRightsClosed Access-
item.fullcitationARESU, Stefano; DE CEUNINCK, Ward; DREESEN, Raf; CROES, Kristof; ANDRIES, Ellen; MANCA, Jean; DE SCHEPPER, Luc; DEGRAEVE, Maria; Kaczer, B.; D'OLIESLAEGER, Marc & D'HAEN, Jan (2002) High-resolution SILC measurements of thin SiO2 ultra low voltages. In: MICROELECTRONICS RELIABILITY, 42(9-11). p. 1485-1489.-
item.fulltextNo Fulltext-
item.contributorARESU, Stefano-
item.contributorDE CEUNINCK, Ward-
item.contributorDREESEN, Raf-
item.contributorCROES, Kristof-
item.contributorANDRIES, Ellen-
item.contributorMANCA, Jean-
item.contributorDE SCHEPPER, Luc-
item.contributorDEGRAEVE, Maria-
item.contributorKaczer, B.-
item.contributorD'OLIESLAEGER, Marc-
item.contributorD'HAEN, Jan-
item.validationecoom 2003-
crisitem.journal.issn0026-2714-
crisitem.journal.eissn1872-941X-
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