Addressing the impact of rear surface passivation mechanisms on ultra-thin Cu(In,Ga)Se-2 solar cell performances using SCAPS 1-D model

Abstract

We present a (1-D) SCAPS device model to address the following: (i) the surface passivation mechanisms (i.e. field-effect and chemical), (ii) their impact on the CIGS solar cell performance for varying CIGS absorber thickness, (iii) the importance of fixed charge type (+/-) and densities of fixed and interface trap charges, and (iv) the reasons for discrete gains in the experimental cell efficiencies (previously reported) for varying CIGS absorber thickness. First, to obtain a reliable device model, the proposed set of parameters is validated for both field-effect (due to fixed charges) and chemical passivation (due to interface traps) using a simple M-I-S test structure and experimentally extracted values (previously reported) into the SCAPS simulator. Next, we provide figures of merits without any significant loss in the solar cell performances for minimum net- Qf and maximum acceptable limit for Dit, found to be similar to 5 x 10(12) cm(-2) and similar to x 10(13) cm(-2) eV(-1) respectively. We next show that the influence of negative fixed charges in the rear passivation layer (i.e. field-effect passivation) is more predominant than that of the positive fixed charges (i.e. counter-field effect) especially while considering ultra thin (<0.5 mu m) absorber layers. Furthermore, we show the importance of rear reflectance on the short-circuit photocurrent densities while scaling down the CIGS absorber layers below 0.5 gm under interface chemical and field-effect passivation mechanisms. Finally, we provide the optimal rear passivation layer parameters for efficiencies greater than 20% with ultra-thin CIGS absorber thickness (<0.5 mu m). Based on these simulation results, we confirm that a negatively charged rear surface passivation with nano-point contact approach is efficient for the enhancement of cell performances, especially while scaling down the absorber thickness below 0.5 mu m.