Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/26388
Title: | Insights into the reliability of Ni/Cu plated p-PERC silicon solar cells | Authors: | Dang, Chi Labie, Riet Simoen, Eddy TOUS, Loic Russell, Richard DUERINCKX, Filip Mertens, Robert POORTMANS, Jef |
Issue Date: | 2017 | Publisher: | Elsevier Science BV | Source: | Preu, Ralf (Ed.). 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, Elsevier Science BV,p. 862-868 | Series/Report: | Energy Procedia | Series/Report no.: | 124 | Abstract: | Selective laser ablation of dielectric layers in combination with plated Ni/Cu/Ag contacts have been investigated by many photovoltaic researchers. Despite that there has been quite some practical progress on improved processing, the reliability of plated Ni/Cu/Ag cells still needs further insight and understanding. In this paper, the impact of laser induced defects that result from a ps-laser (wavelength 355nm) ablation on the performance of p-type PERC cells has been studied. A thermal stress experiment at 235 degrees C is applied. It is shown that the defects formed during the laser ablation process do indeed decrease the cell performance. A higher laser fluence results in lower fill factor and therefore lower efficiency. Moreover, the cells with higher laser fluence ablation degrade faster compared to the cells which had lower laser fluence to open the dielectric layer. The second part of the paper focuses on characterization of the p-n junction of the laser ablated cells by Deep Level Transient Spectroscopy (DLTS) before and after thermal ageing. A hole trap around 80K was found for all samples, which is related to point defects induced during the cell processing. A broad peak around 200K observed for the ablated cells with high laser fluence could correspond to dislocations induced by the laser ablation. This peak is shifted to higher energy (closer to the silicon mid-gap) after annealing, which may be due to impurity decoration during the annealing. (C) 2017 The Authors. Published by Elsevier Ltd. | Notes: | [Dang, Chi; Poortmans, Jef] IMEC, Kapeldreef 75, B-3001 Heverlee, Leuven, Belgium. [Dang, Chi; Labie, Riet; Simoen, Eddy; Tous, Loic; Russell, Richard; Duerinckx, Filip; Mertens, Robert; Poortmans, Jef] KULeuven, ESAT, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven, Belgium. [Poortmans, Jef] UHasselt, Wetenschapspk 2, B-3590 Diepenbeek, Hasselt, Belgium. [Simoen, Eddy] Univ Ghent, Krijgslaan 281 Si, B-9000 Ghent, Belgium. | Keywords: | laser ablation; plated Ni/Cu; solar cells; reliability; DLTS;Laser ablation; Plated Ni/Cu; solar cells; Reliability; DLTS | Document URI: | http://hdl.handle.net/1942/26388 | DOI: | 10.1016/j.egypro.2017.09.243 | ISI #: | 000426791600116 | Rights: | (C) 2017 The Authors. Published by Elsevier Ltd. | Category: | C1 | Type: | Proceedings Paper |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Poortmans207.pdf | Published version | 725.76 kB | Adobe PDF | View/Open |
SCOPUSTM
Citations
3
checked on Sep 7, 2020
WEB OF SCIENCETM
Citations
3
checked on Oct 14, 2024
Page view(s)
50
checked on Sep 7, 2022
Download(s)
100
checked on Sep 7, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.