Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/26444
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dc.contributor.authorGarud, Siddhartha-
dc.contributor.authorGampa, Nikhil-
dc.contributor.authorAllen, Thomas G.-
dc.contributor.authorKotipalli, Ratan-
dc.contributor.authorFlandre, Denis-
dc.contributor.authorBatuk, Maria-
dc.contributor.authorHadermann, Joke-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorPOORTMANS, Jef-
dc.contributor.authorSmets, Arno-
dc.contributor.authorVERMANG, Bart-
dc.date.accessioned2018-07-27T13:25:56Z-
dc.date.available2018-07-27T13:25:56Z-
dc.date.issued2018-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215(7) (Art N° 1700826)-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/1942/26444-
dc.description.abstractThis work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).-
dc.description.sponsorshipThe work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements.-
dc.language.isoen-
dc.rights© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.subject.otherCIGS solar cells; gallium oxide; plasma-enhanced atomic layer deposition; surface passivation-
dc.titleSurface Passivation of CIGS Solar Cells Using Gallium Oxide-
dc.typeJournal Contribution-
dc.identifier.issue7-
dc.identifier.volume215-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notesVermang, B (reprint author), IMOMEC Partner Solliance, Imec Div, B-3590 Hasselt, Belgium, Hasselt Univ, Fac Engn Technol, B-3590 Hasselt, Belgium. bart.vermang@uhasselt.be-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr1700826-
local.type.programmeH2020-
local.relation.h2020715027-
dc.identifier.doi10.1002/pssa.201700826-
dc.identifier.isi000430128500015-
item.fulltextWith Fulltext-
item.accessRightsRestricted Access-
item.fullcitationGarud, Siddhartha; Gampa, Nikhil; Allen, Thomas G.; Kotipalli, Ratan; Flandre, Denis; Batuk, Maria; Hadermann, Joke; MEURIS, Marc; POORTMANS, Jef; Smets, Arno & VERMANG, Bart (2018) Surface Passivation of CIGS Solar Cells Using Gallium Oxide. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215(7) (Art N° 1700826).-
item.validationecoom 2019-
item.contributorGarud, Siddhartha-
item.contributorGampa, Nikhil-
item.contributorAllen, Thomas G.-
item.contributorKotipalli, Ratan-
item.contributorFlandre, Denis-
item.contributorBatuk, Maria-
item.contributorHadermann, Joke-
item.contributorMEURIS, Marc-
item.contributorPOORTMANS, Jef-
item.contributorSmets, Arno-
item.contributorVERMANG, Bart-
crisitem.journal.issn1862-6300-
crisitem.journal.eissn1862-6319-
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