Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2735
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dc.contributor.authorCROES, Kristof-
dc.contributor.authorDREESEN, Raf-
dc.contributor.authorMANCA, Jean-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorTielemans, L-
dc.contributor.authorVan der Wel, P-
dc.date.accessioned2007-11-15T21:54:03Z-
dc.date.available2007-11-15T21:54:03Z-
dc.date.issued2001-
dc.identifier.citationMICROELECTRONICS RELIABILITY, 41(9-10). p. 1439-1442-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/2735-
dc.description.abstractThe electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts (DeltaR/R-0=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times (DeltaR/R-0=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. (C) 2001 Elsevier Science Ltd. All rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleHigh-resolution in-situ study of gold electromigration: test time reduction-
dc.typeJournal Contribution-
dc.identifier.epage1442-
dc.identifier.issue9-10-
dc.identifier.spage1439-
dc.identifier.volume41-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notesMat Res Inst, B-3590 Diepenbeek, Belgium. Xpeqt, B-3980 Tessenderlo, Belgium. Philips Semicond, NL-6539 AE Nijmegen, Netherlands.Croes, K, Mat Res Inst, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.isi000171384900029-
item.fulltextNo Fulltext-
item.contributorCROES, Kristof-
item.contributorDREESEN, Raf-
item.contributorMANCA, Jean-
item.contributorDE CEUNINCK, Ward-
item.contributorDE SCHEPPER, Luc-
item.contributorTielemans, L-
item.contributorVan der Wel, P-
item.accessRightsClosed Access-
item.fullcitationCROES, Kristof; DREESEN, Raf; MANCA, Jean; DE CEUNINCK, Ward; DE SCHEPPER, Luc; Tielemans, L & Van der Wel, P (2001) High-resolution in-situ study of gold electromigration: test time reduction. In: MICROELECTRONICS RELIABILITY, 41(9-10). p. 1439-1442.-
item.validationecoom 2002-
crisitem.journal.issn0026-2714-
crisitem.journal.eissn1872-941X-
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