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http://hdl.handle.net/1942/2735
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | CROES, Kristof | - |
dc.contributor.author | DREESEN, Raf | - |
dc.contributor.author | MANCA, Jean | - |
dc.contributor.author | DE CEUNINCK, Ward | - |
dc.contributor.author | DE SCHEPPER, Luc | - |
dc.contributor.author | Tielemans, L | - |
dc.contributor.author | Van der Wel, P | - |
dc.date.accessioned | 2007-11-15T21:54:03Z | - |
dc.date.available | 2007-11-15T21:54:03Z | - |
dc.date.issued | 2001 | - |
dc.identifier.citation | MICROELECTRONICS RELIABILITY, 41(9-10). p. 1439-1442 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | http://hdl.handle.net/1942/2735 | - |
dc.description.abstract | The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts (DeltaR/R-0=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times (DeltaR/R-0=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. (C) 2001 Elsevier Science Ltd. All rights reserved. | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | High-resolution in-situ study of gold electromigration: test time reduction | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 1442 | - |
dc.identifier.issue | 9-10 | - |
dc.identifier.spage | 1439 | - |
dc.identifier.volume | 41 | - |
local.format.pages | 4 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | Mat Res Inst, B-3590 Diepenbeek, Belgium. Xpeqt, B-3980 Tessenderlo, Belgium. Philips Semicond, NL-6539 AE Nijmegen, Netherlands.Croes, K, Mat Res Inst, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.isi | 000171384900029 | - |
item.fulltext | No Fulltext | - |
item.contributor | CROES, Kristof | - |
item.contributor | DREESEN, Raf | - |
item.contributor | MANCA, Jean | - |
item.contributor | DE CEUNINCK, Ward | - |
item.contributor | DE SCHEPPER, Luc | - |
item.contributor | Tielemans, L | - |
item.contributor | Van der Wel, P | - |
item.accessRights | Closed Access | - |
item.fullcitation | CROES, Kristof; DREESEN, Raf; MANCA, Jean; DE CEUNINCK, Ward; DE SCHEPPER, Luc; Tielemans, L & Van der Wel, P (2001) High-resolution in-situ study of gold electromigration: test time reduction. In: MICROELECTRONICS RELIABILITY, 41(9-10). p. 1439-1442. | - |
item.validation | ecoom 2002 | - |
crisitem.journal.issn | 0026-2714 | - |
crisitem.journal.eissn | 1872-941X | - |
Appears in Collections: | Research publications |
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