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http://hdl.handle.net/1942/27438
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DC Field | Value | Language |
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dc.contributor.author | Nell, Bernhard | - |
dc.contributor.author | Ortstein, Katrin | - |
dc.contributor.author | Boltalina, Olga V. | - |
dc.contributor.author | VANDEWAL, Koen | - |
dc.date.accessioned | 2018-11-19T15:02:41Z | - |
dc.date.available | 2018-11-19T15:02:41Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | JOURNAL OF PHYSICAL CHEMISTRY C, 122(22), p. 11730-11735 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://hdl.handle.net/1942/27438 | - |
dc.description.abstract | Increasing the amount of charge carriers by molecular doping is important to improve the function of several organic electronic devices. In this work, we use highly fluorinated fullerene (C60F48) to p-type dope common amorphous molecular host materials. We observe a general relation between the material's electrical conductivity and Seebeck coefficient, both strongly depending on the energy level offset between the amorphous host and the dopant. This suggests that the doping efficiency at similar doping levels is mainly determined by the electron transfer yield from host to dopant. Indeed, the dopant anion and host cation absorption strength correlate with the ionization energy (IE) of the host material. Host materials with an IE significantly below the electron affinity of the dopant yield the highest doping efficiency. Surprisingly, the doping efficiency reduces only by about 1 order of magnitude when the IE of the host material is increased by 0.55 eV, which we attribute to the disordered nature of the host materials. | - |
dc.description.sponsorship | K.V. and B.N. thank the "Thinface" project from the European Union Seventh Framework Programme (no. 607232) and the Graduate Academy of TU Dresden for financial support. O.V.B. thanks the National Science Foundation for partial support (grant CHE-1362302). The authors thank L. Shi and Y. Liu for recording absorption spectra of TCTA and doped BF-DPB and Y. Karpov and A. Kiriy for providing the CN6-CP dopant. | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject.other | Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.title | Influence of Dopant-Host Energy Level Offset on Thermoelectric Properties of Doped Organic Semiconductors | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 11735 | - |
dc.identifier.issue | 22 | - |
dc.identifier.spage | 11730 | - |
dc.identifier.volume | 122 | - |
local.format.pages | 6 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Nell, Bernhard; Ortstein, Katrin; Vandewal, Koen] Tech Univ Dresden, Dresden Integrated Ctr Appl Phys & Photon Mat, D-01062 Dresden, Germany. [Boltalina, Olga V.] Colorado State Univ, Dept Chem, Ft Collins, CO 80523 USA. [Vandewal, Koen] Hasselt Univ, IMEC IMOMEC, Inst Mat Res, B-3590 Diepenbeek, Belgium. | - |
local.publisher.place | WASHINGTON | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1021/acs.jpcc.8b03804 | - |
dc.identifier.isi | 000435020300015 | - |
item.fullcitation | Nell, Bernhard; Ortstein, Katrin; Boltalina, Olga V. & VANDEWAL, Koen (2018) Influence of Dopant-Host Energy Level Offset on Thermoelectric Properties of Doped Organic Semiconductors. In: JOURNAL OF PHYSICAL CHEMISTRY C, 122(22), p. 11730-11735. | - |
item.fulltext | With Fulltext | - |
item.validation | ecoom 2019 | - |
item.contributor | Nell, Bernhard | - |
item.contributor | Ortstein, Katrin | - |
item.contributor | Boltalina, Olga V. | - |
item.contributor | VANDEWAL, Koen | - |
item.accessRights | Open Access | - |
crisitem.journal.issn | 1932-7447 | - |
crisitem.journal.eissn | 1932-7455 | - |
Appears in Collections: | Research publications |
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nell 1.pdf Restricted Access | Published version | 798.5 kB | Adobe PDF | View/Open Request a copy |
Influence_of_Dopant-Host_Energy_Level_Offset_on_Thermoelectric_Properties_of_Doped_Organic_Semiconductors-author version.pdf | Peer-reviewed author version | 983.27 kB | Adobe PDF | View/Open |
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