Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/27642
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dc.contributor.authorMARCHAL, Wouter-
dc.contributor.authorLongo, Alessandro-
dc.contributor.authorBriois, Valérie-
dc.contributor.authorVan Hecke, Kristof-
dc.contributor.authorELEN, Ken-
dc.contributor.authorVAN BAEL, Marlies-
dc.contributor.authorHARDY, An-
dc.date.accessioned2019-01-25T10:00:24Z-
dc.date.available2019-01-25T10:00:24Z-
dc.date.issued2018-
dc.identifier.citationInorganic chemistry, 57(24), p. 15205-15215-
dc.identifier.issn0020-1669-
dc.identifier.urihttp://hdl.handle.net/1942/27642-
dc.description.abstractFast and scalable low-temperature deposition of microscale metallic features is of utmost importance for the development of future flexible smart applications including sensors, wireless communication, and wearables. Recently, a new class of metal−organic decomposition (MOD) copper inks was developed, consisting of self-reducing copper formate containing amine complexes. From these novel inks, copper metal features with outstanding electrical conductivity (±105 S cm−1 ) are deposited at a temperature of 150 °C or less, which is well below the reduction temperature of orthorhombic α-copper formate (around 225 °C). However, the underlying principle of this reaction mechanism and the relationship between the corresponding temperature shift and the amine coordination are still under debate. The current study provides a full explanation for the shift in reduction temperatures via in situ characterization. The results clearly indicate that the structural resemblance and stability of the Cu(II) starting compound and the occurring Cu(I) intermediate during the in situ reduction are the two main variables that rationalize the temperature shift. As such, the thermal compatibility of copper MOD inks with conventional plastic substrates such as polyethylene terephthalate can be explained, based on metal−organic complex properties.-
dc.description.sponsorshipThe authors acknowledge F. Mattelaer and C. De Tavernier from the COCOON group at Ghent University for the in situ HT-XRD measurements to support the findings based on the XAS data. Moreover, J. Maggen is acknowledged for performing the CHN analysis, B. Joos and G. Maino for the electrochemical experiments, and the DUBBLE and SOLEIL beamline staff for their support during and after the measurement campaigns. Moreover, this work was supported by a public grant overseen by the French National Research Agency (ANR) as part of the "Investissements d'Avenir" program (reference: ANR10-EQPX45). Prof. Van Hecke thanks the Hercules Foundation (project AUGE/11/029 "3D-SPACE: 3D Structural Platform Aiming for Chemical Excellence") and the Special Research Fund (BOF) UGent (project 01N03217) for funding. Finally, the authors are grateful for the SIM-Met@linkfunding.-
dc.language.isoen-
dc.titleUnderstanding the importance of Cu(I) intermediates in self-reducing molecular inks for flexible electronics-
dc.typeJournal Contribution-
dc.identifier.epage15215-
dc.identifier.issue24-
dc.identifier.spage15205-
dc.identifier.volume57-
local.bibliographicCitation.jcatA1-
dc.description.notesMarchal, W (reprint author), UHasselt Hasselt Univ, Inst Mat Res IMO IMOMEC Inorgan & Phys Chem, Agoralaan Bldg D, B-3950 Diepenbeek, Belgium. wouter.marchal@uhasselt.be-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1021/acs.inorgchem.8b02493-
dc.identifier.isi000453938700019-
item.validationecoom 2020-
item.fulltextWith Fulltext-
item.accessRightsOpen Access-
item.fullcitationMARCHAL, Wouter; Longo, Alessandro; Briois, Valérie; Van Hecke, Kristof; ELEN, Ken; VAN BAEL, Marlies & HARDY, An (2018) Understanding the importance of Cu(I) intermediates in self-reducing molecular inks for flexible electronics. In: Inorganic chemistry, 57(24), p. 15205-15215.-
item.contributorMARCHAL, Wouter-
item.contributorLongo, Alessandro-
item.contributorBriois, Valérie-
item.contributorVan Hecke, Kristof-
item.contributorELEN, Ken-
item.contributorVAN BAEL, Marlies-
item.contributorHARDY, An-
crisitem.journal.issn0020-1669-
crisitem.journal.eissn1520-510X-
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