Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/28576
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dc.contributor.authorSahayaraj, S.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorVERMANG, Bart-
dc.contributor.authorSchnabel, T.-
dc.contributor.authorAhlswede, E.-
dc.contributor.authorHuang, Z.-
dc.contributor.authorRanjbar, S.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorVleugels, J.-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2019-07-02T09:02:43Z-
dc.date.available2019-07-02T09:02:43Z-
dc.date.issued2017-
dc.identifier.citation2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), IEEE,p. 3260-3264-
dc.identifier.isbn9781509056057-
dc.identifier.issn0160-8371-
dc.identifier.urihttp://hdl.handle.net/1942/28576-
dc.description.abstractIn this work, the fabrication and properties of a Ge-based Kesterite Cu2ZnGeSe4 solar cell have been discussed. The substitution and the existence of the quaternary compound has been verified by physical methods. The device has a power conversion efficiency of 5.5% under AM1.5G illumination which is among the highest reported for pure Ge substitution. In depth electrical and optical analysis show that the Cu2ZnGeSe4 absorber has less bulk defects, less or no band tailing and no sub band gap emissions, which are all characteristic of Cu2ZnGeSe4 devices. These beneficial opto-electronic properties also result in a high open circuit voltage (V-oc) of 744 mV which is amongst the highest reported for Kesterite materials.-
dc.description.sponsorshipFlemish government, Department Economy, Science and Innovation; European Union's Horizon 2020 research and innovation program [640868]-
dc.language.isoen-
dc.publisherIEEE-
dc.relation.ispartofseriesIEEE Photovoltaic Specialists Conference-
dc.subject.otherPotential-induced degradation; n-type rear-emitter crystalline silicon photovoltaic modules; surface recombination-
dc.titleThe outcome of replacing Sn completely by Ge in Kesterite Cu2ZnSnSe4 solar cells-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedateJUN 25-30, 2017-
local.bibliographicCitation.conferencenameIEEE 44th Photovoltaic Specialist Conference (PVSC)-
local.bibliographicCitation.conferenceplaceWashington, DC-
dc.identifier.epage3264-
dc.identifier.spage3260-
local.format.pages5-
local.bibliographicCitation.jcatC1-
dc.description.notes[Sahayaraj, S.; Brammertz, G.; Huang, Z.; Ranjbar, S.; Meuris, M.] IMEC, Div IMOMEC, Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Sahayaraj, S.; Brammertz, G.; Huang, Z.; Ranjbar, S.; Meuris, M.] Hasselt Univ, Inst Mat Res IMO, Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Vermang, B.; Poortmans, J.] IMEC, Solliance, Kapeldreef 75, B-3001 Leuven, Belgium. [Sahayaraj, S.; Vermang, B.; Poortmans, J.] Katholieke Univ Leuven, Dept Elect Engn, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium. [Huang, Z.] Univ Luxembourg, Lab Photovolta, Rue Brill 41, L-4422 Belvaux, Luxembourg. [Ranjbar, S.] Univ Aveiro, I3N Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal. [Schnabel, T.; Ahlswede, E.] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70565 Stuttgart, Germany. [Vleugels, J.] Katholieke Univ Leuven, Dept Mat Engn, Kasteelpk Arenberg 44, B-3001 Heverlee, Belgium.-
local.publisher.placeNEW YORK-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.isi000455636003057-
local.bibliographicCitation.btitle2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)-
item.contributorSahayaraj, S.-
item.contributorBRAMMERTZ, Guy-
item.contributorVERMANG, Bart-
item.contributorSchnabel, T.-
item.contributorAhlswede, E.-
item.contributorHuang, Z.-
item.contributorRanjbar, S.-
item.contributorMEURIS, Marc-
item.contributorVleugels, J.-
item.contributorPOORTMANS, Jef-
item.fullcitationSahayaraj, S.; BRAMMERTZ, Guy; VERMANG, Bart; Schnabel, T.; Ahlswede, E.; Huang, Z.; Ranjbar, S.; MEURIS, Marc; Vleugels, J. & POORTMANS, Jef (2017) The outcome of replacing Sn completely by Ge in Kesterite Cu2ZnSnSe4 solar cells. In: 2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), IEEE,p. 3260-3264.-
item.fulltextWith Fulltext-
item.accessRightsOpen Access-
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