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http://hdl.handle.net/1942/28610
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DC Field | Value | Language |
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dc.contributor.author | Dang, C. | - |
dc.contributor.author | Labie, R. | - |
dc.contributor.author | Simoen, E. | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.date.accessioned | 2019-07-04T09:53:52Z | - |
dc.date.available | 2019-07-04T09:53:52Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | SOLAR ENERGY MATERIALS AND SOLAR CELLS, 184, p. 57-66 | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | http://hdl.handle.net/1942/28610 | - |
dc.description.abstract | In this paper a detailed study on the electrical characteristics of Ni/Cu/Ag plated p-type Passivated Emitter Rear Contact (PERC) silicon solar cells is reported. By comparing the cell performance of different cell groups, pseudo Fill Factor (pFF) degradation by laser-induced defects, is observed. High-power (hard) laser ablated cells exhibit a lower efficiency and faster degradation with thermal ageing. We also present structural and electrical characterization to further visualize and identify the responsible defects, which turn out to be laser-ablation-induced dislocations, penetrating the silicon emitter and base. Increasing the laser fluence gives rise to a higher dislocation density. These dislocations are further confirmed as active generation-recombination centers by Deep Level Transient Spectroscopy (DLTS) analysis. The laser ablation induced dislocations are unavoidable because even at insufficient laser fluence (0.48 J/cm(2)) to fully open the dielectric stack, the density is already at the level of 10(6)/cm(2). A substitutional nickel peak is also detected by DLTS, suggesting nickel diffusing into the silicon base during the sinter step. Whereas no copper levels are found in the p-type silicon base by DLTS even after thermal aging at 235 degrees C. | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject.other | PERC cells; Laser ablation; Ni/Cu/Ag plating; Defects; Reliability; Diffusion | - |
dc.subject.other | PERC cells; Laser ablation; Ni/Cu/Ag plating; Defects; Reliability; Diffusion | - |
dc.title | Detailed structural and electrical characterization of plated crystalline silicon solar cells | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 66 | - |
dc.identifier.spage | 57 | - |
dc.identifier.volume | 184 | - |
local.format.pages | 10 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Dang, C.; Labie, R.; Simoen, E.; Poortmans, J.] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. [Dang, C.; Poortmans, J.] Katholieke Univ Leuven, Dept Elektrotech ESAT, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium. [Simoen, E.] Univ Ghent, Krijgslaan 281 Si, B-9000 Ghent, Belgium. [Poortmans, J.] Agoralaan Gebouw D, Campus Diepenbeek, UHasselt, B-3590 Diepenbeek, Belgium. | - |
local.publisher.place | AMSTERDAM | - |
local.type.refereed | Refereed | - |
local.type.specified | Review | - |
dc.identifier.doi | 10.1016/j.solmat.2018.04.016 | - |
dc.identifier.isi | 000434746800008 | - |
item.fullcitation | Dang, C.; Labie, R.; Simoen, E. & POORTMANS, Jef (2018) Detailed structural and electrical characterization of plated crystalline silicon solar cells. In: SOLAR ENERGY MATERIALS AND SOLAR CELLS, 184, p. 57-66. | - |
item.validation | ecoom 2019 | - |
item.contributor | Dang, C. | - |
item.contributor | Labie, R. | - |
item.contributor | Simoen, E. | - |
item.contributor | POORTMANS, Jef | - |
item.fulltext | With Fulltext | - |
item.accessRights | Restricted Access | - |
crisitem.journal.issn | 0927-0248 | - |
crisitem.journal.eissn | 1879-3398 | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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1-s2.0-S0927024818301855-main.pdf Restricted Access | Published version | 4.12 MB | Adobe PDF | View/Open Request a copy |
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