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http://hdl.handle.net/1942/28684
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DC Field | Value | Language |
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dc.contributor.author | Cho, Jinyoun | - |
dc.contributor.author | Melskens, Jimmy | - |
dc.contributor.author | Debucquoy, Maarten | - |
dc.contributor.author | Payo, Maria Recaman | - |
dc.contributor.author | Jambaldinni, Shruti | - |
dc.contributor.author | Bearda, Twan | - |
dc.contributor.author | GORDON, Ivan | - |
dc.contributor.author | Szlufcik, Jozef | - |
dc.contributor.author | Kessels, W. M. M. | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.date.accessioned | 2019-07-09T11:16:44Z | - |
dc.date.available | 2019-07-09T11:16:44Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | PROGRESS IN PHOTOVOLTAICS, 26(10), p. 835-845 | - |
dc.identifier.issn | 1062-7995 | - |
dc.identifier.uri | http://hdl.handle.net/1942/28684 | - |
dc.description.abstract | In this work, the ATOM (intrinsic a-Si:H/TiOx/low work function metal) structure is investigated to realize high-performance passivating electron-selective contacts for crystalline silicon solar cells. The absence of a highly doped Si region in this contact structure is meant to reduce the optoelectrical losses. We show that a low contact resistivity (rho(c)) can be obtained by the combined effect of a low work function metal, such as calcium (Phi 2.9eV), and Fermi-level depinning in the metal-insulator-semiconductor contact structure (where in our case TiOx acts as the insulator on the intrinsic a-Si:H passivating layer). TiOx grown by ALD is effective to achieve not only a low rho(c) but also good passivation properties. As an electron contact in silicon heterojunction solar cells, inserting interfacial TiOx at the i-a-Si:H/Ca interface significantly enhances the solar cell conversion efficiency. Consequently, the champion solar cell with the ATOM contact achieves a V-OC of 711 mV, FF of 72.9%, J(SC) of 35.1 mA/cm(2), and an efficiency of 18.2%. The achievement of a high V-OC and reasonable FF without the need for a highly doped Si layer serves as a valuable proof of concept for future developments on passivating electron-selective contacts using this structure. | - |
dc.description.sponsorship | imec, Interuniversity Microelectronics Center, Belgium | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.rights | 2018 John Wiley & Sons, Ltd. | - |
dc.subject.other | carrier-selective; electron-selective; heterojunction; passivating contact; TiOx; calcium; low work function metal | - |
dc.subject.other | carrier‐selective; electron‐selective; heterojunctio; passivating contact; TiOx; calcium; lowworkfunction metal | - |
dc.title | Passivating electron-selective contacts for silicon solar cells based on an a-Si:H/TiOx stack and a low work function metal | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 845 | - |
dc.identifier.issue | 10 | - |
dc.identifier.spage | 835 | - |
dc.identifier.volume | 26 | - |
local.format.pages | 11 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Cho, Jinyoun; Poortmans, Jef] Katholieke Univ Leuven, ESAT Dept, B-3001 Leuven, Belgium. [Cho, Jinyoun; Debucquoy, Maarten; Payo, Maria Recaman; Jambaldinni, Shruti; Bearda, Twan; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef] Imec, Kapeldreef 75, B-3001 Leuven, Belgium. [Melskens, Jimmy; Kessels, W. M. M.] Eindhoven Univ Technol, Dept Appl Phys, POB 513, NL-5600 MB Eindhoven, Netherlands. [Poortmans, Jef] Univ Hasselt, Martelarenlaan 42, B-3500 Hasselt, Belgium. [Poortmans, Jef] EnergyVille, Thor Pk 8310, B-3600 Genk, Belgium. | - |
local.publisher.place | HOBOKEN | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1002/pip.3023 | - |
dc.identifier.isi | 000443696500007 | - |
item.accessRights | Restricted Access | - |
item.fullcitation | Cho, Jinyoun; Melskens, Jimmy; Debucquoy, Maarten; Payo, Maria Recaman; Jambaldinni, Shruti; Bearda, Twan; GORDON, Ivan; Szlufcik, Jozef; Kessels, W. M. M. & POORTMANS, Jef (2018) Passivating electron-selective contacts for silicon solar cells based on an a-Si:H/TiOx stack and a low work function metal. In: PROGRESS IN PHOTOVOLTAICS, 26(10), p. 835-845. | - |
item.contributor | Cho, Jinyoun | - |
item.contributor | Melskens, Jimmy | - |
item.contributor | Debucquoy, Maarten | - |
item.contributor | Payo, Maria Recaman | - |
item.contributor | Jambaldinni, Shruti | - |
item.contributor | Bearda, Twan | - |
item.contributor | GORDON, Ivan | - |
item.contributor | Szlufcik, Jozef | - |
item.contributor | Kessels, W. M. M. | - |
item.contributor | POORTMANS, Jef | - |
item.fulltext | With Fulltext | - |
crisitem.journal.issn | 1062-7995 | - |
crisitem.journal.eissn | 1099-159X | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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cho 1.pdf Restricted Access | Published version | 1.29 MB | Adobe PDF | View/Open Request a copy |
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