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http://hdl.handle.net/1942/28752
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DC Field | Value | Language |
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dc.contributor.author | Xu, Menglei | - |
dc.contributor.author | Wang, Chong | - |
dc.contributor.author | Bearda, Twan | - |
dc.contributor.author | Simoen, Eddy | - |
dc.contributor.author | Radhakrishnan, Hariharsudan Sivaramakrishnan | - |
dc.contributor.author | Gordon, Ivan | - |
dc.contributor.author | Li, Wei | - |
dc.contributor.author | Szlufcik, Jozef | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.date.accessioned | 2019-07-17T11:20:47Z | - |
dc.date.available | 2019-07-17T11:20:47Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | IEEE Journal of Photovoltaics, 8(6), p. 1539-1545 | - |
dc.identifier.issn | 2156-3381 | - |
dc.identifier.uri | http://hdl.handle.net/1942/28752 | - |
dc.description.abstract | A fully dry and hydrofluoric-free low-temperature process has been developed to passivate n-type crystalline silicon (c-Si) surfaces. Particularly, the use of a hydrogen (H-2) plasma treatment followed by in situ intrinsic hydrogenated amorphous silicon (a-Si:H) deposition has been investigated. The impact of H-2 gas flow rate and H-2 plasma processing time on the a-Si:H/c-Si interface passivation quality is studied. Optimal H-2 plasma processing conditions result in the best effective minority carrier lifetime of up to 2.5 ms at an injection level of 1 x 10(15) cm(-3), equivalent to the best effective surface recombination velocity of 4 cm/s. The reasons that enable such superior passivation quality are discussed in this paper based on the characterization of the a-Si:H/c-Si interface and c-Si substrate using transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, and deep-level transient spectroscopy. | - |
dc.description.sponsorship | This work was supported in part by the Imec's industrial affiliation program for Si-PV and in part by the China Scholarship Council. (Menglei Xu and Chong Wang contributed equally to this work.) | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject.other | hydrogenated amorphous silicon (a-Si:H); hydrogen (H2 ) plasma; passivation; silicon heterojunction (SHJ) solar cells | - |
dc.subject.other | Hydrogenated amorphous silicon (a-Si:H); hydrogen (H-2) plasma; passivation; silicon heterojunction (SHJ) solar cells | - |
dc.title | Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si: H Deposition | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 1545 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 1539 | - |
dc.identifier.volume | 8 | - |
local.format.pages | 7 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Xu, Menglei; Poortmans, Jef] Katholieke Univ Leuven, B-3001 Leuven, Belgium. [Xu, Menglei; Bearda, Twan; Simoen, Eddy; Radhakrishnan, Hariharsudan Sivaramakrishnan; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef] IMEC, B-3001 Leuven, Belgium. [Wang, Chong; Li, Wei] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China. [Bearda, Twan] ENTRAS, B-2800 Mechelen, Belgium. [Simoen, Eddy] Univ Ghent, B-9000 Ghent, Belgium. [Poortmans, Jef] Hasselt Univ, B-3500 Hasselt, Belgium. | - |
local.publisher.place | PISCATAWAY | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1109/JPHOTOV.2018.2871329 | - |
dc.identifier.isi | 000448898400018 | - |
item.fulltext | With Fulltext | - |
item.validation | ecoom 2019 | - |
item.contributor | Simoen, Eddy | - |
item.contributor | POORTMANS, Jef | - |
item.contributor | Radhakrishnan, Hariharsudan Sivaramakrishnan | - |
item.contributor | Bearda, Twan | - |
item.contributor | Xu, Menglei | - |
item.contributor | Li, Wei | - |
item.contributor | Szlufcik, Jozef | - |
item.contributor | Gordon, Ivan | - |
item.contributor | Wang, Chong | - |
item.fullcitation | Xu, Menglei; Wang, Chong; Bearda, Twan; Simoen, Eddy; Radhakrishnan, Hariharsudan Sivaramakrishnan; Gordon, Ivan; Li, Wei; Szlufcik, Jozef & POORTMANS, Jef (2018) Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si: H Deposition. In: IEEE Journal of Photovoltaics, 8(6), p. 1539-1545. | - |
item.accessRights | Restricted Access | - |
crisitem.journal.issn | 2156-3381 | - |
crisitem.journal.eissn | 2156-3403 | - |
Appears in Collections: | Research publications |
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xu2018.pdf Restricted Access | version in press | 2.9 MB | Adobe PDF | View/Open Request a copy |
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