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Title: Temperature dependent spectroscopic study of the electronic structure of phosphorus in n-type CVD diamond films
Authors: HAENEN, Ken 
MEYKENS, Kristien 
KNUYT, Gilbert 
STALS, Lambert 
Teraji, T
Koizumi, S
Gheeraert, E
Issue Date: 2000
Source: DIAMOND AND RELATED MATERIALS, 9(3-6). p. 952-955
Abstract: In this work we used the quasi-steady-state photocurrent method and photothermal ionisation spectroscopy (PTIS) to study the electronic structure of the P-related level in n-type phosphorus doped CVD diamond. Previously, we reported the existence of two optically active defect levels, labelled X-P1 and X-P2, in the bandgap of these P-doped layers. X-P2 appeared to be only present in films showing high resistivity. Here we present a detailed PTIS and photocurrent study of the photoionisation cross-section, from liquid helium up to room temperature. At low temperatures, samples containing only the X-P1 defect show a phonon-induced oscillatory photoconductivity, giving information about the electronic structure of this defect. Additionally, with PTIS a sharp maximum was detected around 565 meV, originating from a thermal promotion of charge carriers from an excited state of the phosphorus-related level into the conduction band. We also discuss different models for the optical ionisation cross-section of the P-related level (e.g. shallow level, deep level). (C) 2000 Elsevier Science S.A. All rights reserved.
Notes: Limburgs Univ Ctr, Div Mat Phys, Inst Mat Res, B-3590 Diepenbeek, Belgium. Natl Inst Res Inorgan Mat, NIRIM, Res Ctr Adv Mat, Tsukuba, Ibaraki 3050044, Japan. CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble, France.Haenen, K, Limburgs Univ Ctr, Div Mat Phys, Inst Mat Res, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
Keywords: n-type doping; phosphorus; photoconductivity; spectroscopy
Document URI:
DOI: 10.1016/S0925-9635(99)00202-2
ISI #: 000087382400145
Category: A1
Type: Journal Contribution
Validations: ecoom 2001
Appears in Collections:Research publications

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