Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2920
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dc.contributor.authorMANCA, Jean-
dc.contributor.authorWondrak, W-
dc.contributor.authorSchaper, W-
dc.contributor.authorCROES, Kristof-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorDieval, B-
dc.contributor.authorHartnagel, HL-
dc.contributor.authorD'OLIESLAEGER, Marc-
dc.contributor.authorDE SCHEPPER, Luc-
dc.date.accessioned2007-11-20T13:01:37Z-
dc.date.available2007-11-20T13:01:37Z-
dc.date.issued2000-
dc.identifier.citationMICROELECTRONICS RELIABILITY, 40(8-10). p. 1679-1682-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/2920-
dc.description.abstractGate oxide reliability and thermal shock resistance of power MOSFETs for high temperature applications, have been investigated, by accelerated tests and several analytical and electrical techniques. Thermal shock tests have been performed between -40 degrees C and 200 degrees C with subsequent electrical tests and failure analysis. Time Dependent Dielectric Breakdown (TDDB) of the gate oxide: has been studied in detail by means of in-situ leakage current measurements at various voltages and temperatures. A statistical analysis of the results yields information on the underlying failure time distribution, failure mechanisms and lifetime. (C) 2000 Elsevier Science Ltd. All rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleReliability aspects of high temperature power MOSFETs-
dc.typeJournal Contribution-
dc.identifier.epage1682-
dc.identifier.issue8-10-
dc.identifier.spage1679-
dc.identifier.volume40-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notesLimburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium. DaimlerChrysler AG, Res & Technol, D-60528 Frankfurt, Germany. Tech Univ Darmstadt, Inst High Frequency Tech, D-64397 Darmstadt, Germany.Manca, JV, Limburgs Univ Ctr, Inst Mat Res, Univ Campus, B-3590 Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/S0026-2714(00)00187-6-
dc.identifier.isi000089532800072-
item.validationecoom 2001-
item.fulltextNo Fulltext-
item.accessRightsClosed Access-
item.fullcitationMANCA, Jean; Wondrak, W; Schaper, W; CROES, Kristof; D'HAEN, Jan; DE CEUNINCK, Ward; Dieval, B; Hartnagel, HL; D'OLIESLAEGER, Marc & DE SCHEPPER, Luc (2000) Reliability aspects of high temperature power MOSFETs. In: MICROELECTRONICS RELIABILITY, 40(8-10). p. 1679-1682.-
item.contributorMANCA, Jean-
item.contributorHartnagel, HL-
item.contributorCROES, Kristof-
item.contributorWondrak, W-
item.contributorSchaper, W-
item.contributorDE CEUNINCK, Ward-
item.contributorDE SCHEPPER, Luc-
item.contributorD'OLIESLAEGER, Marc-
item.contributorDieval, B-
item.contributorD'HAEN, Jan-
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