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Title: | Low temperature photoconductivity detection of phosphorus in diamond | Authors: | HAENEN, Ken MEYKENS, Kristien NESLADEK, Milos KNUYT, Gilbert QUAEYHAEGENS, Carl STALS, Lambert Koizumi, S Gheeraert, E |
Issue Date: | 1999 | Publisher: | WILEY-V C H VERLAG GMBH | Source: | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 174(1). p. 53-58 | Abstract: | Photocurrent measurements and the Constant Photocurrent Method (CPM) were used to carry out a spectroscopic study of epitaxial phosphorus-doped n-type CVD diamond films. Two optically active defect levels, X-P1 and X-P2, With photoionisation energy of 0.56 and 0.81 eV, respectively, found in previous work [1] are discussed in detail here. Comparison of CPM data with the activation energy of the carriers from Hall effect measurements suggest that the X-P1 defect can be attributed to the P-related donor level. X-P2 remains unidentified. Measurements carried out on a set of samples show that the X-P2 defect is only present in some samples showing high resistivity. To study the electronic structure of the X-P1 level, photocurrent measurements at low temperatures (liquid N-2 and liquid He) were done, revealing a phonon-induced oscillatory photoconductivity. Two sets of minima are observed which allow an estimation of the position of the first two excited states of phosphorus. Also a comparison is made with results from FTIR measurements. | Notes: | Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Natl Inst Res Inorgan Mat, Ctr Adv Mat Res, Tsukuba, Ibaraki 305, Japan. CNRS, Etud Proprietes Elect Solides Lab, Grenoble 9, France.Haenen, K, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium. | Document URI: | http://hdl.handle.net/1942/3021 | DOI: | 10.1002/(SICI)1521-396X(199907)174:1<53::AID-PSSA53>3.0.CO;2-9 | ISI #: | 000081733800012 | Type: | Journal Contribution | Validations: | ecoom 2000 |
Appears in Collections: | Research publications |
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