Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/3026
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dc.contributor.authorMANCA, Jean-
dc.contributor.authorNESLADEK, Milos-
dc.contributor.authorNeelen, M-
dc.contributor.authorQUAEYHAEGENS, Carl-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorDE CEUNINCK, Ward-
dc.date.accessioned2007-11-23T13:17:18Z-
dc.date.available2007-11-23T13:17:18Z-
dc.date.issued1999-
dc.identifier.citationMICROELECTRONICS RELIABILITY, 39(2). p. 269-273-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/3026-
dc.description.abstractDue to its combination of excellent thermo-mechanical properties and electrical properties such as the high electrical resistivity and high dielectric strength, diamond seems a promising material for specialized dielectric applications. Due to the great advances in the growth technology of diamond films by chemical vapour deposition (CVD) on e.g. Si-substrates, new applications can be expected in microelectronics. An important technological result for dielectric applications is that high electrical resistivity diamond films can be obtained after an appropriate heat treatment of the as-grown films. (C) 1999 Elsevier Science Ltd. All rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleHigh electrical resistivity of CVD-diamond-
dc.typeJournal Contribution-
dc.identifier.epage273-
dc.identifier.issue2-
dc.identifier.spage269-
dc.identifier.volume39-
local.format.pages5-
dc.description.notesLimburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium.Manca, JV, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/S0026-2714(98)00225-X-
dc.identifier.isi000080532100019-
item.validationecoom 2000-
item.fullcitationMANCA, Jean; NESLADEK, Milos; Neelen, M; QUAEYHAEGENS, Carl; DE SCHEPPER, Luc & DE CEUNINCK, Ward (1999) High electrical resistivity of CVD-diamond. In: MICROELECTRONICS RELIABILITY, 39(2). p. 269-273.-
item.contributorMANCA, Jean-
item.contributorNESLADEK, Milos-
item.contributorNeelen, M-
item.contributorQUAEYHAEGENS, Carl-
item.contributorDE SCHEPPER, Luc-
item.contributorDE CEUNINCK, Ward-
item.fulltextNo Fulltext-
item.accessRightsClosed Access-
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