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http://hdl.handle.net/1942/30409
Title: | Deposition of diamond films on single crystalline silicon carbide substrates | Authors: | Mukherjee, Debarati Oliveira, Filipe Trippe, Simone Rotter, Shlomo Neto, Miguel Silva, Rui MALLIK, Awadesh HAENEN, Ken Zetterling, Carl-Mikael Mendes, Joana |
Issue Date: | 2020 | Publisher: | Elsevier | Source: | Diamond and Related Materials, 101 (Art N° 107625) | Abstract: | Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pre-treatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6-12 and 40-60 μm grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy. | Keywords: | DND seeding;CVD diamond;Device passivation;SiC | Document URI: | http://hdl.handle.net/1942/30409 | ISSN: | 0925-9635 | e-ISSN: | 1879-0062 | DOI: | 10.1016/j.diamond.2019.107625 | ISI #: | WOS:000510954000026 | Rights: | 2019 Elsevier B.V. All rights reserved | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2021 |
Appears in Collections: | Research publications |
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1-s2.0-S0925963519305163-main (1).pdf Restricted Access | Published version | 3.65 MB | Adobe PDF | View/Open Request a copy |
Revised document changes accepted.pdf | Peer-reviewed author version | 2.28 MB | Adobe PDF | View/Open |
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