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Title: | Infrared Absorption Enhancement Using Periodic Inverse Nanopyramids in Crystalline-Silicon Bottom Cells for Application in Tandem Devices | Authors: | Razzaq, Arsalan DEPAUW, Valerie Radhakrishnan, Hariharsudan Sivaramakrishnan Cho, Jinyoun GORDON, Ivan Szlufcik, Jozef Abdulraheem, Yaser POORTMANS, Jef |
Issue Date: | 2020 | Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Source: | IEEE JOURNAL OF PHOTOVOLTAICS, 10 (3) , p. 740 -748 | Abstract: | Carefully tailored periodic nanostructures on the light wavelength scale, such as diffraction gratings, benefit from wave optics for efficiently trapping the weakly absorbing infrared photons in crystalline-silicon (c-Si) absorbers. In contrast with the conventional random pyramid texture, diffraction gratings can be designed to target specific wavelength ranges by the selection of the grating pitch. Absorption enhancement at infrared wavelengths in a silicon solar cell is especially desired when it operates below a perovskite top cell in a tandem device. In this article, inverse nanopyramid gratings of 800 nm pitch are proposed as an alternative front-surface texture to random pyramids in silicon heterojunction devices with interdigitated back contacts that are to be used as bottom cells in four-terminal perovskite/c-Si tandem devices. By doing so, we report a short-circuit current density gain of 0.53 mA/cm(2) with respect to the random pyramid texturing for the bottom c-Si cell. The rationale to substitute random pyramids by inverse nanopyramid gratings is, however, not justified in single-junction operation despite achieving the power conversion efficiency of 22.3% since the degraded optical performance at shorter wavelengths offsets the absorption enhancement at longer wavelengths, resulting in similar levels of short-circuit current densities for both texture types. | Notes: | Razzaq, A (reprint author), Katholieke Univ Leuven, Dept Elektrotech ESAT, Leuven 3001, Belgium. arsalan.razzaq@imec.be; valerie.depauw@imec.be; hariharsudan.sivaramakrishnan@imec.be; jinyoun.cho.ext@imec.be; ivan.gordon@imec.be; jozef.szlufcik@imec.be; yaser.abdulraheem@ku.edu.kw; jef.poortmans@imec.be |
Other: | Razzaq, A (corresponding author), Katholieke Univ Leuven, Dept Elektrotech ESAT, Leuven 3001, Belgium. arsalan.razzaq@imec.be; valerie.depauw@imec.be; hariharsudan.sivaramakrishnan@imec.be; jinyoun.cho.ext@imec.be; ivan.gordon@imec.be; jozef.szlufcik@imec.be; yaser.abdulraheem@ku.edu.kw; jef.poortmans@imec.be | Keywords: | Absorption;Photonics;Diffraction gratings;Gratings;Photonic band gap;Diffraction;Silicon | Document URI: | http://hdl.handle.net/1942/31359 | ISSN: | 2156-3381 | e-ISSN: | 2156-3403 | DOI: | 10.1109/JPHOTOV.2020.2972324 | ISI #: | WOS:000530407300004 | Rights: | Copyright 2020 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions. | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2021 |
Appears in Collections: | Research publications |
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