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Title: Correlation between the OES plasma composition and the diamond film properties during microwave PA-CVD with nitrogen addition
Authors: Vandevelde, Thierry
WU, Ting-Di
STALS, Lambert 
Issue Date: 1999
Source: THIN SOLID FILMS, 340(1-2). p. 159-163
Abstract: The mechanisms of nitrogen incorporation in diamond are still an unsolved riddle. This is mainly due to the complexity of the processes involved as they not only depend on empirical parameters (e.g. vessel pressure, substrate temperature, the gas phase composition, type and concentration of the nitrogen containing compound used), but also on the plasma chemistry and the surface chemical reactions. In this study, small quantities (ppm range) of diatomic nitrogen are added to a conventional hydrogen-methane feed gas mixture in order to investigate the effect of nitrogen incorporation in diamond films prepared by microwave plasma assisted chemical vapour deposition (CVD). Optical emission spectroscopy (OES) is used to survey the plasma composition during deposition. The intensities of the CN, CH and C-2 emitting radicals and the Balmer atomic hydrogen emission lines are correlated to the Raman film quality and to the nitrogen content in the film measured by secondary ion mass spectrometry (SIMS). (C) 1999 Elsevier Science S.A. All rights reserved.
Notes: Ctr Sci & Tech Res Met Mfg, B-3590 Diepenbeek, Belgium. Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium.Vandevelde, T, Ctr Sci & Tech Res Met Mfg, Wetenschapspark 3, B-3590 Diepenbeek, Belgium.
Keywords: chemical vapour deposition; diamond; nitrogen; secondary ion mass spectrometry; OES; Raman
Document URI:
ISSN: 0040-6090
e-ISSN: 1879-2731
DOI: 10.1016/S0040-6090(98)01410-2
ISI #: 000079353000027
Type: Journal Contribution
Validations: ecoom 2000
Appears in Collections:Research publications

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