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Title: | Optical Lithography Patterning of SiO 2 Layers for Interface Passivation of Thin Film Solar Cells | Authors: | Bose, Sourav Cunha, Jose M., V SURESH, Sunil DE WILD, Jessica LOPES, Tomas Barbosa, Joao R. S. Silva, Ricardo Borme, Jerome Fernandes, Paulo A. VERMANG, Bart Salome, Pedro M. P. |
Issue Date: | 2018 | Publisher: | WILEY-V C H VERLAG GMBH | Source: | Solar RRL (online), 2 (12) (Art N° 1800212) | Abstract: | Ultrathin Cu(In,Ga)Se-2 solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. An optical lithography process that can produce sub-micrometer contacts in a SiO2 passivation layer at the CIGS rear contact is developed in this work. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques. | Notes: | Salome, PMP (reprint author), INL, Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.; Salome, PMP (reprint author), Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal. pedro.salome@inl.int |
Keywords: | KeywordsCu(In;Ga)Se2(CIGS);defects passivation;optoelectronics;semiconductors;thin film solar cells | Document URI: | http://hdl.handle.net/1942/31440 | ISSN: | 2367-198X | e-ISSN: | 2367-198X | DOI: | 10.1002/solr.201800212 | ISI #: | WOS:000452302800015 | Rights: | 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2020 |
Appears in Collections: | Research publications |
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