Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31481
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dc.contributor.authorSimoen, E-
dc.contributor.authorRothschild, A.-
dc.contributor.authorVERMANG, Bart-
dc.contributor.authorPOORTMANS, Jef-
dc.contributor.authorMertens, R.-
dc.date.accessioned2020-07-28T12:21:27Z-
dc.date.available2020-07-28T12:21:27Z-
dc.date.issued2011-
dc.date.submitted2020-07-28T12:19:26Z-
dc.identifier.citationECS Transactions, 3 (4) , p. 160-162 -44-
dc.identifier.isbn978-1-60768-258-5-
dc.identifier.isbn978-1-56677-904-3-
dc.identifier.issn1938-5862-
dc.identifier.urihttp://hdl.handle.net/1942/31481-
dc.description.abstractDeep Level Transient Spectroscopy (DLTS) has been applied to study the interface states of 5 nm Atomic Layer Deposited (ALD) Al2O3 films on p-type Si. In addition, the passivation of the interface states by Forming Gas Anneal (FGA) and Firing has been explored. It is shown that the near mid-gap density of interface states (D-it) is successfully reduced by both treatments. From a comparison with 5 nm SiO2 reference capacitors it can be concluded that similar interface defects are observed, suggesting that they are dominated by the thin interfacial SiO2 layer formed during ALD.-
dc.language.isoen-
dc.publisher-
dc.relation.ispartofseriesECS Transactions-
dc.titleA Deep-Level Transient Spectroscopy Comparison of the SiO2/Si and Al2O3/Si Interface States-
dc.typeProceedings Paper-
dc.relation.edition4-
local.bibliographicCitation.conferencedateOCT 09-14, 2011-
local.bibliographicCitation.conferencenameSymposium on Photovoltaics for the 21st Century 7 held during the 220th Meeting of the Electrochemical-Society (ECS)-
local.bibliographicCitation.conferenceplaceBoston, MA-
dc.identifier.epage44-
dc.identifier.spage160-162-
local.bibliographicCitation.jcatA1-
local.publisher.place65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr41-
dc.source.typeMeeting-
dc.identifier.doi10.1149/1.3628607-
dc.identifier.isiWOS:000309530700005-
dc.identifier.urlhttp://doi.org/10.1149/1.3628607-
dc.identifier.eissn1938-6737-
local.provider.typebibtex-
local.bibliographicCitation.btitlePHOTOVOLTAICS FOR THE 21ST CENTURY 7-
local.uhasselt.uhpubno-
item.fulltextNo Fulltext-
item.contributorSimoen, E-
item.contributorRothschild, A.-
item.contributorVERMANG, Bart-
item.contributorPOORTMANS, Jef-
item.contributorMertens, R.-
item.fullcitationSimoen, E; Rothschild, A.; VERMANG, Bart; POORTMANS, Jef & Mertens, R. (2011) A Deep-Level Transient Spectroscopy Comparison of the SiO2/Si and Al2O3/Si Interface States. In: ECS Transactions, 3 (4) , p. 160-162 -44.-
item.accessRightsClosed Access-
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