Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31485
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dc.contributor.authorBULDU KOHL, Dilara-
dc.contributor.authorDE WILD, Jessica-
dc.contributor.authorKOHL, Thierry-
dc.contributor.authorBIRANT, Gizem-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorPOORTMANS, Jef-
dc.contributor.authorVERMANG, Bart-
dc.date.accessioned2020-07-28T13:23:42Z-
dc.date.available2020-07-28T13:23:42Z-
dc.date.issued2019-
dc.date.submitted2020-07-28T13:16:57Z-
dc.identifier.citation2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), p. 0920 -0922-
dc.identifier.isbn978-1-7281-0494-2-
dc.identifier.issn0160-8371-
dc.identifier.urihttp://hdl.handle.net/1942/31485-
dc.description.abstractRoom temperature photoluminescence measurement has been carried out on 1-stage co-evaporated Cu(In,Ga)Se-2 thin film in order to investigate the effect of ammonium sulfide (NH4)(2)S surface treatment. The defect related PL peak in the as-deposited CIGS thin film changes with CGI ratio. The surface treatment leads to an increase in the main PL intensity by a factor of similar to 10. The lifetime of minority carriers is slightly increased after surface treatment, and it is observed that a low-Cu region is more affected than a high-Cu region.-
dc.language.isoen-
dc.publisherIEEE-
dc.relation.ispartofseriesIEEE Photovoltaic Specialists Conference-
dc.rightsCopyright 2020 IEEE - All rights reserved.-
dc.subject.otherCu(In, Ga)Se-2-
dc.subject.other(NH4)2S surface treatment-
dc.subject.otherroom temperature photoluminescence-
dc.titleStudy of Room Temperature Photoluminescence For 1-stage Co-Evaporated Ultra-Thin Cu(In,Ga)Se2 Solar Cells-
dc.typeProceedings Paper-
dc.relation.edition2019-
local.bibliographicCitation.conferencedateJUN 16-21, 2019-
local.bibliographicCitation.conferencenameIEEE 46th Photovoltaic Specialists Conference (PVSC)-
local.bibliographicCitation.conferenceplaceChicago, IL, USA, USA-
dc.identifier.epage0922-
dc.identifier.spage0920-
local.bibliographicCitation.jcatC1-
local.publisher.place345 E 47TH ST, NEW YORK, NY 10017 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr46-
dc.identifier.doi10.1109/pvsc40753.2019.8980832-
dc.identifier.isiWOS:000542034900190-
dc.identifier.urlhttp://doi.org/10.1109/pvsc40753.2019.8980832-
dc.identifier.eissn-
local.provider.typebibtex-
local.bibliographicCitation.btitle2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)-
local.uhasselt.uhpubyes-
item.validationecoom 2021-
item.contributorBULDU KOHL, Dilara-
item.contributorDE WILD, Jessica-
item.contributorKOHL, Thierry-
item.contributorBIRANT, Gizem-
item.contributorBRAMMERTZ, Guy-
item.contributorMEURIS, Marc-
item.contributorPOORTMANS, Jef-
item.contributorVERMANG, Bart-
item.fullcitationBULDU KOHL, Dilara; DE WILD, Jessica; KOHL, Thierry; BIRANT, Gizem; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef & VERMANG, Bart (2019) Study of Room Temperature Photoluminescence For 1-stage Co-Evaporated Ultra-Thin Cu(In,Ga)Se2 Solar Cells. In: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), p. 0920 -0922.-
item.fulltextNo Fulltext-
item.accessRightsClosed Access-
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