Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31490
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSimoen, E-
dc.contributor.authorRothschild, A-
dc.contributor.authorVERMANG, Bart-
dc.contributor.authorPOORTMANS, Jef-
dc.contributor.authorMertens, R-
dc.date.accessioned2020-07-30T12:10:08Z-
dc.date.available2020-07-30T12:10:08Z-
dc.date.issued2011-
dc.date.submitted2020-07-30T09:04:09Z-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, 14 (9) , p. H362 -H364-
dc.identifier.urihttp://hdl.handle.net/1942/31490-
dc.description.abstractThe interface-state spectrum at the Al2O3/p-Si interface is investigated by Deep-Level Transient Spectroscopy on Metal-Oxide-Semiconductor (MOS) capacitors. It is shown that a Forming Gas Anneal or firing step leads to a significant reduction of the density of interface states (D-it). At the same time, it is found that the peak activation energy of the D-it distribution lowers towards the valence band of Si. From a comparison with the DLTS data on 5 nm SiO2 MOS capacitors, it is concluded that the same type of states is observed for both dielectrics, implying that the interface properties are determined by the thin interfacial SiO2 layer. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3597661] All rights reserved.-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.rights2011 ECS - The Electrochemical Society-
dc.subject.otheralumina-
dc.subject.otheraluminium-
dc.subject.otherannealing-
dc.subject.otherdeep level transient spectroscopy-
dc.subject.otherelemental semiconductors-
dc.subject.otherfiring (materials)-
dc.subject.otherinterface states-
dc.subject.otherMOS capacitors-
dc.subject.othersemiconductor-insulator boundaries-
dc.subject.othersilicon-
dc.subject.othervalence bands-
dc.titleImpact of Forming Gas Annealing and Firing on the Al2O3/p-Si Interface State Spectrum-
dc.typeJournal Contribution-
dc.identifier.epageH364-
dc.identifier.issue9-
dc.identifier.spageH362-
dc.identifier.volume14-
local.bibliographicCitation.jcatA1-
local.publisher.place65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1149/1.3597661-
dc.identifier.isiWOS:000292521900014-
dc.identifier.eissn-
local.provider.typeWeb of Science-
local.uhasselt.uhpubno-
item.fulltextNo Fulltext-
item.contributorSimoen, E-
item.contributorRothschild, A-
item.contributorVERMANG, Bart-
item.contributorPOORTMANS, Jef-
item.contributorMertens, R-
item.fullcitationSimoen, E; Rothschild, A; VERMANG, Bart; POORTMANS, Jef & Mertens, R (2011) Impact of Forming Gas Annealing and Firing on the Al2O3/p-Si Interface State Spectrum. In: ELECTROCHEMICAL AND SOLID STATE LETTERS, 14 (9) , p. H362 -H364.-
item.accessRightsClosed Access-
crisitem.journal.issn1099-0062-
Appears in Collections:Research publications
Show simple item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.