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http://hdl.handle.net/1942/31491
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DC Field | Value | Language |
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dc.contributor.author | VERMANG, Bart | - |
dc.contributor.author | Fjallstrom, V | - |
dc.contributor.author | Pettersson, J | - |
dc.contributor.author | Salome, P | - |
dc.contributor.author | Edoff, M | - |
dc.date.accessioned | 2020-07-30T12:16:42Z | - |
dc.date.available | 2020-07-30T12:16:42Z | - |
dc.date.issued | 2013 | - |
dc.date.submitted | 2020-07-30T08:00:33Z | - |
dc.identifier.citation | Solar energy materials and solar cells, 117 (SI) , p. 505 -511 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31491 | - |
dc.description.abstract | For the first time, a novel rear contacting structure for copper indium gallium (di)selenide (CIGS) thin film solar cells is discussed theoretically, developed in an industrially viable way, and demonstrated in tangible devices. The proposed cell design reduces back contacting area by combining a rear surface passivation layer and nano-sized local point contacts. Atomic layer deposition (ALD) of Al2O3 is used to passivate the CIGS surface and the formation of nano-sphere shaped precipitates in chemical bath deposition (CBD) of CdS to generate point contact openings. The Al2O3 rear surface passivated CIGS solar cells with nano-sized local rear point contacts show a significant improvement in open circuit voltage (Voc) compared to unpassivated reference cells. Comparing the passivated devices to solar cell capacitance simulator (SCAPS) modeling indicates that this increase is attributed to a decrease in rear surface recombination of a few orders. (C) 2013 The Authors. Published by Elsevier B.V. All rights reserved. | - |
dc.description.sponsorship | B. Vermang acknowledges the financial support of the European Commission via FP7 Marie Curie IEF 2011 Action no. 300998. Furthermore, this work is partly funded by the Swedish Science Foundation (VR) and the Swedish Energy Agency. Finally, the authors would like to thank Timo Wätjen for the TEM picture, used as Graphical abstract. | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.rights | 2013 The Authors. Published by Elsevier B.V. Open Access under CC BY_NC_SA license | - |
dc.subject.other | Photovoltaics | - |
dc.subject.other | Thin film CIGS solar cells | - |
dc.subject.other | Rear surface passivation | - |
dc.subject.other | Al2O3 | - |
dc.subject.other | Nano-sized local point contacts | - |
dc.title | Development of rear surface passivated Cu(In,Ga)Se-2 thin film solar cells with nano-sized local rear point contacts | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 511 | - |
dc.identifier.issue | SI | - |
dc.identifier.spage | 505 | - |
dc.identifier.volume | 117 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1016/j.solmat.2013.07.025 | - |
dc.identifier.isi | WOS:000325188400077 | - |
dc.identifier.eissn | - | |
local.provider.type | Web of Science | - |
local.uhasselt.uhpub | no | - |
item.fullcitation | VERMANG, Bart; Fjallstrom, V; Pettersson, J; Salome, P & Edoff, M (2013) Development of rear surface passivated Cu(In,Ga)Se-2 thin film solar cells with nano-sized local rear point contacts. In: Solar energy materials and solar cells, 117 (SI) , p. 505 -511. | - |
item.fulltext | With Fulltext | - |
item.contributor | VERMANG, Bart | - |
item.contributor | Fjallstrom, V | - |
item.contributor | Pettersson, J | - |
item.contributor | Salome, P | - |
item.contributor | Edoff, M | - |
item.accessRights | Open Access | - |
crisitem.journal.issn | 0927-0248 | - |
crisitem.journal.eissn | 1879-3398 | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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1-s2.0-S0927024813003711-main.pdf | Published version | 2 MB | Adobe PDF | View/Open |
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