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Title: | Approach for Al2O3 rear surface passivation of industrial p-type Si PERC above 19% | Authors: | VERMANG, Bart Goverde, H TOUS, Loic Lorenz Choulat, P Horzel, J John, J POORTMANS, Jef Mertens, R |
Issue Date: | 2012 | Publisher: | WILEY | Source: | Progress in photovoltaics (Print), 20 (3) , p. 269 -273 | Abstract: | Atomic layer deposition (ALD) of thin Al2O3 (=10?nm) films is used to improve the rear surface passivation of large-area screen-printed p-type Si passivated emitter and rear cells (PERC). A blister-free stack of Al2O3/SiOx/SiNx is developed, leading to an improved back reflection and a rear recombination current (J0,rear) of 92 +/- 6?fA/cm2. The Al2O3/SiOx/SiNx stack is blister-free if a 700 degrees C anneal in N2 is performed after the Al2O3 deposition and prior to the SiOx/SiNx capping. A clear relationship between blistering density and lower open-circuit voltage (VOC) due to increased rear contacting area is shown. In case of the blister-free Al2O3/SiOx/SiNx rear surface passivation stack, an average cell efficiency of 19.0% is reached and independently confirmed by FhG-ISE CalLab. Compared with SiOx/SiNx-passivated PERC, there is an obvious gain in VOC and short-circuit current (JSC) of 5?mV and 0.2?mA/cm2, respectively, thanks to improved rear surface passivation and rear internal reflection. Copyright (c) 2012 John Wiley & Sons, Ltd. | Keywords: | Si;surface;passivation;Al2O3;ALD;PERC | Document URI: | http://hdl.handle.net/1942/31492 | ISSN: | 1062-7995 | e-ISSN: | 1099-159X | DOI: | 10.1002/pip.2196 | ISI #: | WOS:000302946900003 | Rights: | 2012 John Wiley & Sons, Ltd. | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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