Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31494
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dc.contributor.authorGoverde, H-
dc.contributor.authorVERMANG, Bart-
dc.contributor.authorMorato, A-
dc.contributor.authorJohn, J-
dc.contributor.authorHorzel, J-
dc.contributor.authorMeneghesso, G-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2020-07-31T07:41:05Z-
dc.date.available2020-07-31T07:41:05Z-
dc.date.issued2012-
dc.date.submitted2020-07-30T09:20:58Z-
dc.identifier.citationELSEVIER SCIENCE BV, p. 355 -360-
dc.identifier.issn1876-6102-
dc.identifier.urihttp://hdl.handle.net/1942/31494-
dc.description.abstractIn this work, the influence of the c-Si surface finishing (hydrophobic/hydrophilic) prior to the deposition of the Al2O3 passivation layer on the passivation quality is investigated. The samples are characterized by a combination of Quasi-Steady-State-PhotoConductance (QSSPC) Capacity-Conductance (CV), X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed InfraRed (FTIR) measurements. Furthermore, FTIR measurements are used to determine the thickness of interfacial SiOx layer. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.-
dc.description.sponsorshipThe authors greatly acknowledge the support of the IMEC Industrial Affiliated Partner (IIAP-PV) program and the IMEC PV support team. T. Bearda and S. Granada are kindly acknowledged for the FTIR measurements.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.relation.ispartofseriesEnergy Procedia-
dc.rights2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientifi c committee of the SiliconPV 2012 conference.Open access under CC BY-NC-ND license.Open access under CC BY-NC-ND license.-
dc.subject.otherSi-
dc.subject.otherSurface Passivavation-
dc.subject.otherAl2O3-
dc.subject.otherFTIR-
dc.subject.otherCV-
dc.subject.otherXPS-
dc.subject.otherQSSPC-
dc.titleAl2O3 surface passivation characterized on hydrophobic and hydrophilic c-Si by a combination of QSSPC, CV, XPS and FTIR-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedateAPR 03-05, 2012-
local.bibliographicCitation.conferencename2nd International Conference on Crystalline Silicon Photovoltaics (SiliconPV)-
local.bibliographicCitation.conferenceplaceIMEC, Leuven, BELGIUM-
dc.identifier.epage360-
dc.identifier.spage355-
dc.identifier.volume27-
local.bibliographicCitation.jcatC1-
local.publisher.placeSARA BURGERHARTSTRAAT 25, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.doi10.1016/j.egypro.2012.07.076-
dc.identifier.isiWOS:000313202000057-
dc.identifier.eissn-
local.provider.typeWeb of Science-
local.uhasselt.uhpubno-
item.fulltextWith Fulltext-
item.contributorGoverde, H-
item.contributorVERMANG, Bart-
item.contributorMorato, A-
item.contributorJohn, J-
item.contributorHorzel, J-
item.contributorMeneghesso, G-
item.contributorPOORTMANS, Jef-
item.fullcitationGoverde, H; VERMANG, Bart; Morato, A; John, J; Horzel, J; Meneghesso, G & POORTMANS, Jef (2012) Al2O3 surface passivation characterized on hydrophobic and hydrophilic c-Si by a combination of QSSPC, CV, XPS and FTIR. In: ELSEVIER SCIENCE BV, p. 355 -360.-
item.accessRightsOpen Access-
Appears in Collections:Research publications
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