Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31500
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dc.contributor.authorDE WILD, Jessica-
dc.contributor.authorKOHL, Thierry-
dc.contributor.authorBULDU KOHL, Dilara-
dc.contributor.authorBIRANT, Gizem-
dc.contributor.authorParragh, David Mate-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorPOORTMANS, Jef-
dc.contributor.authorVERMANG, Bart-
dc.date.accessioned2020-07-31T08:54:46Z-
dc.date.available2020-07-31T08:54:46Z-
dc.date.issued2019-
dc.date.submitted2020-07-30T08:18:04Z-
dc.identifier.citationIEEE, p. 0928 -0930-
dc.identifier.isbn978-1-7281-0494-2-
dc.identifier.issn0160-8371-
dc.identifier.urihttp://hdl.handle.net/1942/31500-
dc.description.abstractRoom temperature photoluminescence (PL) and intensity dependent PL measurements were used as a tool to investigate alkali treatment (KF and RbF) of thin (< 500 nm) single-stage absorber layers and compared with similar 3-stage samples. Single-stage absorber layers have a clear distinguishable PL peak below the band gap, which is absent in 3-stage absorber layers. We attribute this peak to a defect band arising due to the planar defects and the small grains. We find that this low energy peak can be largely reduced with alkali treatment, leading to similar decay times and PL yield as thin 3 stage samples.-
dc.description.sponsorshipThis work received funding from the European Union’s H2020 research and innovation program under grant agreement No. 715027-
dc.language.isoen-
dc.publisherIEEE-
dc.relation.ispartofseriesIEEE Photovoltaic Specialists Conference-
dc.rights2019 IEEE.-
dc.subject.otherCu(In,Ga)Se-2-
dc.subject.otheralkali treatment-
dc.subject.othersingle-stage-
dc.subject.otherroom temperature photoluminescence-
dc.titleRoom temperature photoluminescence analysis of alkali treated single-stage thin Cu(In,Ga)Se2 absorber layers-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedateJUN 16-21, 2019-
local.bibliographicCitation.conferencenameIEEE 46th Photovoltaic Specialists Conference (PVSC)-
local.bibliographicCitation.conferenceplaceChicago, IL-
dc.identifier.epage0930-
dc.identifier.spage0928-
local.bibliographicCitation.jcatC1-
local.publisher.place345 E 47TH ST, NEW YORK, NY 10017 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr46-
local.type.programmeH2020-
local.relation.h2020715027-
dc.identifier.doi10.1109/pvsc40753.2019.8980738-
dc.identifier.isiWOS:000542034900192-
local.provider.typeCrossRef-
local.bibliographicCitation.btitle2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)-
local.uhasselt.uhpubyes-
item.validationecoom 2021-
item.accessRightsClosed Access-
item.fullcitationDE WILD, Jessica; KOHL, Thierry; BULDU KOHL, Dilara; BIRANT, Gizem; Parragh, David Mate; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef & VERMANG, Bart (2019) Room temperature photoluminescence analysis of alkali treated single-stage thin Cu(In,Ga)Se2 absorber layers. In: IEEE, p. 0928 -0930.-
item.fulltextWith Fulltext-
item.contributorDE WILD, Jessica-
item.contributorKOHL, Thierry-
item.contributorBULDU KOHL, Dilara-
item.contributorBIRANT, Gizem-
item.contributorParragh, David Mate-
item.contributorBRAMMERTZ, Guy-
item.contributorMEURIS, Marc-
item.contributorPOORTMANS, Jef-
item.contributorVERMANG, Bart-
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