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DC Field | Value | Language |
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dc.contributor.author | Kotipalli, R | - |
dc.contributor.author | VERMANG, Bart | - |
dc.contributor.author | Fjallstrom, V | - |
dc.contributor.author | Edoff, M | - |
dc.contributor.author | Delamare, R | - |
dc.contributor.author | Flandre, D | - |
dc.date.accessioned | 2020-07-31T09:10:15Z | - |
dc.date.available | 2020-07-31T09:10:15Z | - |
dc.date.issued | 2015 | - |
dc.date.submitted | 2020-07-30T08:30:10Z | - |
dc.identifier.citation | Physica Status Solidi-Rapid Research Letters, 9 (3) , p. 157 -160 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31501 | - |
dc.description.abstract | The benefits of gallium (Ga) grading on Cu(In, Ga) Se-2 (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive-level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free-carrier densities in the CIGS absorber, and their impact on the cell's open-circuit voltage V-oc. The parameter most constraining the cell's Voc is found to be the deep-defect density close to the space charge region (SCR ). In ungraded devices, high deep-defect concentrations (4.2 x 1016 cm(-3)) were observed near the SCR, offering a source for Shockley Read-Hall recombination, reducing the cell's Voc. In graded devices, the deep-defect densities near the SCR decreased by one order of magnitude (2.5 x 1015 cm(-3)) for back surface graded devices, and almost two orders of magnitude (8.6 x 1014 cm(-3)) for double surface graded devices, enhancing the cell's Voc. In compositionally graded devices, the free-carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.description.sponsorship | This work was supported by FRS-FNRS Belgium, the Swedish Science Foundation (VR) and the Swedish Energy Agency. Additionally, B. Vermang acknowl-edges the financial support of the Flemish Research Foundation FWO (mandate 12O4215N). Lastly, R. Kotipalli would like to thank the teams of the nanofabrication-shared facility WINFAB and the electrical characterization WELCOME platforms at UCL for their technical support. | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.rights | 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.subject.other | gallium | - |
dc.subject.other | deep levels | - |
dc.subject.other | defects | - |
dc.subject.other | admittance spectroscopy | - |
dc.subject.other | CuInGaSe2 | - |
dc.subject.other | solar cells | - |
dc.title | Influence of Ga/(Ga plus In) grading on deep-defect states of Cu(In, Ga)Se-2 solar cells | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 160 | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | 157 | - |
dc.identifier.volume | 9 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1002/pssr.201510024 | - |
dc.identifier.isi | WOS:000351674600001 | - |
dc.identifier.eissn | - | |
local.provider.type | Web of Science | - |
local.uhasselt.uhpub | no | - |
item.fullcitation | Kotipalli, R; VERMANG, Bart; Fjallstrom, V; Edoff, M; Delamare, R & Flandre, D (2015) Influence of Ga/(Ga plus In) grading on deep-defect states of Cu(In, Ga)Se-2 solar cells. In: Physica Status Solidi-Rapid Research Letters, 9 (3) , p. 157 -160. | - |
item.fulltext | With Fulltext | - |
item.contributor | Kotipalli, R | - |
item.contributor | VERMANG, Bart | - |
item.contributor | Fjallstrom, V | - |
item.contributor | Edoff, M | - |
item.contributor | Delamare, R | - |
item.contributor | Flandre, D | - |
item.accessRights | Restricted Access | - |
crisitem.journal.issn | 1862-6254 | - |
crisitem.journal.eissn | 1862-6270 | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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pssr.201510024.pdf Restricted Access | Published version | 400 kB | Adobe PDF | View/Open Request a copy |
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