Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31502
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dc.contributor.authorDE WILD, Jessica-
dc.contributor.authorKOHL, Thierry-
dc.contributor.authorBULDU KOHL, Dilara-
dc.contributor.authorBIRANT, Gizem-
dc.contributor.authorParragh, DM-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorPOORTMANS, Jef-
dc.contributor.authorVERMANG, Bart-
dc.date.accessioned2020-07-31T09:18:54Z-
dc.date.available2020-07-31T09:18:54Z-
dc.date.issued2020-
dc.date.submitted2020-07-30T08:32:30Z-
dc.identifier.citationIEEE Journal of Photovoltaics, 10 (1) , p. 255 -258-
dc.identifier.issn2156-3381-
dc.identifier.urihttp://hdl.handle.net/1942/31502-
dc.description.abstractThin (<500 nm) single-stage coevaporated Cu(In,Ga)Se-2 absorber layers are treated with a KF postanneal in N-2 atmosphere. The conditions of the postanneal initial acceptor concentration and the temperature are varied. Solar cells are characterized with current-voltage and capacitance-voltage measurements. Efficiencies up to 12% with an open-circuit voltage (V-oc) of >640 mV were achieved after the KF treatment. From SCAPS simulations and temperature dependent current voltage-measurements, it is concluded that the V-oc of these cells are limited by backcontact surface recombination and, thus, further improvements require passivation of the back contact.-
dc.description.sponsorshipThis work was supported by the European Union’s H2020 Research and Innovation Program under Grant 715027.-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.rights2019 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.-
dc.subject.otherAlkali treatment-
dc.subject.otherCu(In,Ga)Se-2 (CIGS)-
dc.subject.othersingle-stage process-
dc.subject.otherthin absorber-
dc.titleKF Postdeposition Treatment in N-2 of Single-Stage Thin Cu(In,Ga)Se-2 Absorber Layers-
dc.typeJournal Contribution-
dc.identifier.epage258-
dc.identifier.issue1-
dc.identifier.spage255-
dc.identifier.volume10-
local.bibliographicCitation.jcatA1-
local.publisher.place445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.type.programmeH2020-
local.relation.h2020715027-
dc.identifier.doi10.1109/jphotov.2019.2947758-
dc.identifier.isiWOS:000535673700034-
dc.identifier.eissn2156-3403-
local.provider.typeWeb of Science-
local.uhasselt.uhpubyes-
item.fulltextWith Fulltext-
item.accessRightsOpen Access-
item.fullcitationDE WILD, Jessica; KOHL, Thierry; BULDU KOHL, Dilara; BIRANT, Gizem; Parragh, DM; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef & VERMANG, Bart (2020) KF Postdeposition Treatment in N-2 of Single-Stage Thin Cu(In,Ga)Se-2 Absorber Layers. In: IEEE Journal of Photovoltaics, 10 (1) , p. 255 -258.-
item.validationecoom 2021-
item.contributorDE WILD, Jessica-
item.contributorKOHL, Thierry-
item.contributorBULDU KOHL, Dilara-
item.contributorBIRANT, Gizem-
item.contributorParragh, DM-
item.contributorBRAMMERTZ, Guy-
item.contributorMEURIS, Marc-
item.contributorPOORTMANS, Jef-
item.contributorVERMANG, Bart-
crisitem.journal.issn2156-3381-
crisitem.journal.eissn2156-3403-
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