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http://hdl.handle.net/1942/31502
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DC Field | Value | Language |
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dc.contributor.author | DE WILD, Jessica | - |
dc.contributor.author | KOHL, Thierry | - |
dc.contributor.author | BULDU KOHL, Dilara | - |
dc.contributor.author | BIRANT, Gizem | - |
dc.contributor.author | Parragh, DM | - |
dc.contributor.author | BRAMMERTZ, Guy | - |
dc.contributor.author | MEURIS, Marc | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.contributor.author | VERMANG, Bart | - |
dc.date.accessioned | 2020-07-31T09:18:54Z | - |
dc.date.available | 2020-07-31T09:18:54Z | - |
dc.date.issued | 2020 | - |
dc.date.submitted | 2020-07-30T08:32:30Z | - |
dc.identifier.citation | IEEE Journal of Photovoltaics, 10 (1) , p. 255 -258 | - |
dc.identifier.issn | 2156-3381 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31502 | - |
dc.description.abstract | Thin (<500 nm) single-stage coevaporated Cu(In,Ga)Se-2 absorber layers are treated with a KF postanneal in N-2 atmosphere. The conditions of the postanneal initial acceptor concentration and the temperature are varied. Solar cells are characterized with current-voltage and capacitance-voltage measurements. Efficiencies up to 12% with an open-circuit voltage (V-oc) of >640 mV were achieved after the KF treatment. From SCAPS simulations and temperature dependent current voltage-measurements, it is concluded that the V-oc of these cells are limited by backcontact surface recombination and, thus, further improvements require passivation of the back contact. | - |
dc.description.sponsorship | This work was supported by the European Union’s H2020 Research and Innovation Program under Grant 715027. | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.rights | 2019 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. | - |
dc.subject.other | Alkali treatment | - |
dc.subject.other | Cu(In,Ga)Se-2 (CIGS) | - |
dc.subject.other | single-stage process | - |
dc.subject.other | thin absorber | - |
dc.title | KF Postdeposition Treatment in N-2 of Single-Stage Thin Cu(In,Ga)Se-2 Absorber Layers | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 258 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 255 | - |
dc.identifier.volume | 10 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
local.type.programme | H2020 | - |
local.relation.h2020 | 715027 | - |
dc.identifier.doi | 10.1109/jphotov.2019.2947758 | - |
dc.identifier.isi | WOS:000535673700034 | - |
dc.identifier.eissn | 2156-3403 | - |
local.provider.type | Web of Science | - |
local.uhasselt.uhpub | yes | - |
item.fulltext | With Fulltext | - |
item.accessRights | Open Access | - |
item.fullcitation | DE WILD, Jessica; KOHL, Thierry; BULDU KOHL, Dilara; BIRANT, Gizem; Parragh, DM; BRAMMERTZ, Guy; MEURIS, Marc; POORTMANS, Jef & VERMANG, Bart (2020) KF Postdeposition Treatment in N-2 of Single-Stage Thin Cu(In,Ga)Se-2 Absorber Layers. In: IEEE Journal of Photovoltaics, 10 (1) , p. 255 -258. | - |
item.validation | ecoom 2021 | - |
item.contributor | DE WILD, Jessica | - |
item.contributor | KOHL, Thierry | - |
item.contributor | BULDU KOHL, Dilara | - |
item.contributor | BIRANT, Gizem | - |
item.contributor | Parragh, DM | - |
item.contributor | BRAMMERTZ, Guy | - |
item.contributor | MEURIS, Marc | - |
item.contributor | POORTMANS, Jef | - |
item.contributor | VERMANG, Bart | - |
crisitem.journal.issn | 2156-3381 | - |
crisitem.journal.eissn | 2156-3403 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
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Final_version.pdf | Peer-reviewed author version | 471.85 kB | Adobe PDF | View/Open |
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