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http://hdl.handle.net/1942/31505
Title: | On the choice of the test structure for the electrical characterization of dielectrics for silicon solar cells | Authors: | Loozen, X O'Sullivan, BJ Rothschild, A VERMANG, Bart John, J GORDON, Ivan |
Issue Date: | 2010 | Publisher: | WILEY-V C H VERLAG GMBH | Source: | Physica Status Solidi-Rapid Research Letters, 4 (12) , p. 362 -364 | Abstract: | Surface passivation of Si solar cells is typically achieved by deposition of a dielectric layer. Via the investigation of Al(2)O(3) passivation layers, we show that care must be taken when performing capacitance voltage (C-V) measurements is order to obtain results that are meaningful at solar cell level. The passivation properties of a dielectric are not only affected by post-deposition treatments but also by the presence and the nature of a metal covering the dielectric. Consequently, this Letter emphasizes how important it is to perform C-V measurements on a device structure that resembles as closely as possible that of the finished solar cell, using the same metal, deposition technique and thermal budget. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | Keywords: | surface passivation;solar cells;Si;current-voltage measurements | Document URI: | http://hdl.handle.net/1942/31505 | ISSN: | 1862-6254 | e-ISSN: | 1862-6270 | DOI: | 10.1002/pssr.201004361 | ISI #: | WOS:000286041300008 | Rights: | 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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