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http://hdl.handle.net/1942/31507
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DC Field | Value | Language |
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dc.contributor.author | VERMANG, Bart | - |
dc.contributor.author | Watjen, JT | - |
dc.contributor.author | Fjallstrom, V | - |
dc.contributor.author | Rostvall, F | - |
dc.contributor.author | Edoff, M | - |
dc.contributor.author | Kotipalli, R | - |
dc.contributor.author | Henry, F | - |
dc.contributor.author | Flandre, D | - |
dc.date.accessioned | 2020-07-31T09:42:58Z | - |
dc.date.available | 2020-07-31T09:42:58Z | - |
dc.date.issued | 2014 | - |
dc.date.submitted | 2020-07-30T07:56:18Z | - |
dc.identifier.citation | Progress in photovoltaics (Print), 22 (10) , p. 1023 -1029 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31507 | - |
dc.description.abstract | Reducing absorber layer thickness below 500nm in regular Cu(In,Ga)Se-2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. (c) 2014 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd. | - |
dc.description.sponsorship | B. Vermang acknowledges the financial support of the European Commission via FP7 Marie Curie IEF 2011 Action No. 300998. Furthermore, this work is partly funded by the Swedish Science Foundation (VR) and the Swedish Energy Agency. Lastly, F. Henry would like to thank the European and Wallonia Region FEDER grant ECP12020011678F (MINATIS Project) for financial support. | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.rights | © 2014 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd This is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes. | - |
dc.subject.other | Si | - |
dc.subject.other | PERC | - |
dc.subject.other | Cu(In | - |
dc.subject.other | Ga)Se-2 | - |
dc.subject.other | thin | - |
dc.subject.other | Al2O3 | - |
dc.subject.other | surface passivation layer | - |
dc.subject.other | nano-sized point contact openings | - |
dc.subject.other | rear surface recombination velocity | - |
dc.subject.other | rear internal reflection | - |
dc.title | Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In, Ga)Se-2 solar cells | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 1029 | - |
dc.identifier.issue | 10 | - |
dc.identifier.spage | 1023 | - |
dc.identifier.volume | 22 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | 111 RIVER ST, HOBOKEN 07030-5774, NJ USA | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1002/pip.2527 | - |
dc.identifier.isi | WOS:000342686200001 | - |
local.provider.type | Web of Science | - |
local.uhasselt.uhpub | no | - |
item.fullcitation | VERMANG, Bart; Watjen, JT; Fjallstrom, V; Rostvall, F; Edoff, M; Kotipalli, R; Henry, F & Flandre, D (2014) Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In, Ga)Se-2 solar cells. In: Progress in photovoltaics (Print), 22 (10) , p. 1023 -1029. | - |
item.fulltext | With Fulltext | - |
item.contributor | VERMANG, Bart | - |
item.contributor | Watjen, JT | - |
item.contributor | Fjallstrom, V | - |
item.contributor | Rostvall, F | - |
item.contributor | Edoff, M | - |
item.contributor | Kotipalli, R | - |
item.contributor | Henry, F | - |
item.contributor | Flandre, D | - |
item.accessRights | Open Access | - |
crisitem.journal.issn | 1062-7995 | - |
crisitem.journal.eissn | 1099-159X | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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pip0022-1023.pdf | Published version | 1.05 MB | Adobe PDF | View/Open |
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