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http://hdl.handle.net/1942/31511
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DC Field | Value | Language |
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dc.contributor.author | Cifuentes, N | - |
dc.contributor.author | Ghosh, S | - |
dc.contributor.author | Shongolova, A | - |
dc.contributor.author | Correia, MR | - |
dc.contributor.author | Salome, PMP | - |
dc.contributor.author | Fernandes, PA | - |
dc.contributor.author | Ranjbar, S | - |
dc.contributor.author | Garud, S | - |
dc.contributor.author | VERMANG, Bart | - |
dc.contributor.author | Ribeiro, GM | - |
dc.contributor.author | Gonzalez, JC | - |
dc.date.accessioned | 2020-07-31T10:00:37Z | - |
dc.date.available | 2020-07-31T10:00:37Z | - |
dc.date.issued | 2020 | - |
dc.date.submitted | 2020-07-29T12:53:45Z | - |
dc.identifier.citation | Journal of physical chemistry. C, 124 (14) , p. 7677 -7682 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31511 | - |
dc.description.abstract | A study of the electronic conduction mechanisms and electrically active defects in polycrystalline Sb2Se3 is presented. It is shown that for temperatures above 200 K, the electrical transport is dominated by thermal emission of free holes, ionized from shallow acceptors, over the intergrain potential barriers. In this temperature range, the temperature dependence of the mobility of holes, limited by the intergrain potential barriers, is the main contributor to the observed thermal activation energy of the conductivity of 485 meV. However, at lower temperatures, nearest-neighbor and Mott variable range hopping transport in the bulk of the grains turn into the dominant conduction mechanisms. Important parameters of the electronic structure of the Sb2Se3 thin film such as the average intergrain potential barrier height phi = 391 meV, the intergrain trap density N-t = 3.4 x 10(11 )cm(-2), the shallow acceptor ionization energy E-A0 = 124 meV, the acceptor density N-A = 1 x 10(17) cm(-3), the net donor density N-D = 1 x 8.3 x 10(16) cm(-3), and the compensation ratio kappa = 0, 79 were determined from the analysis of these measurements. | - |
dc.description.sponsorship | P. M. P. Saloméacknowledges the funding of Fundacao para ̃ Ciencia e Tecnologia (FCT) through the project IF/00133/ ̂ 2015. This research is supported by the Development of novel ultrathin solar cell architectures for low-light, low-cost, and flexible optoelectronic devices project (028075) co-funded by FCT and ERDF through COMPETE2020. B. Vermang has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (grant agreement no. 715027). A. Shongalova acknowledges the funding of Erasmus + program 2016/17. This work was funded by FEDER funds through the COMPETE 2020 Programme and by FCTPortuguese Foundation for Science and Technology under the projects UID/CTM/50025/2013. The financial support from Brazilian funding agencies CNPq, CAPES, and FAPEMIG is also acknowledged. | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.rights | 2020 American Chemical Society | - |
dc.title | Electronic Conduction Mechanisms and Defects in Polycrystalline Antimony Selenide | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 7682 | - |
dc.identifier.issue | 14 | - |
dc.identifier.spage | 7677 | - |
dc.identifier.volume | 124 | - |
local.format.pages | 6 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | 1155 16TH ST, NW, WASHINGTON, DC 20036 USA | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
local.type.programme | H2020 | - |
local.relation.h2020 | 715027 | - |
dc.identifier.doi | 10.1021/acs.jpcc.0c00398 | - |
dc.identifier.isi | WOS:000526331500010 | - |
dc.identifier.eissn | 1932-7455 | - |
local.provider.type | Web of Science | - |
local.uhasselt.uhpub | yes | - |
local.uhasselt.international | yes | - |
item.fullcitation | Cifuentes, N; Ghosh, S; Shongolova, A; Correia, MR; Salome, PMP; Fernandes, PA; Ranjbar, S; Garud, S; VERMANG, Bart; Ribeiro, GM & Gonzalez, JC (2020) Electronic Conduction Mechanisms and Defects in Polycrystalline Antimony Selenide. In: Journal of physical chemistry. C, 124 (14) , p. 7677 -7682. | - |
item.fulltext | With Fulltext | - |
item.validation | ecoom 2021 | - |
item.contributor | Cifuentes, N | - |
item.contributor | Ghosh, S | - |
item.contributor | Shongolova, A | - |
item.contributor | Correia, MR | - |
item.contributor | Salome, PMP | - |
item.contributor | Fernandes, PA | - |
item.contributor | Ranjbar, S | - |
item.contributor | Garud, S | - |
item.contributor | VERMANG, Bart | - |
item.contributor | Ribeiro, GM | - |
item.contributor | Gonzalez, JC | - |
item.accessRights | Open Access | - |
crisitem.journal.issn | 1932-7447 | - |
crisitem.journal.eissn | 1932-7455 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
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acs.jpcc.0c00398.pdf Restricted Access | Published version | 1.27 MB | Adobe PDF | View/Open Request a copy |
Electronic_Conduction_Mechanisms_in_Polycrystalline_Antimony_Selenide-6_cifuentes.pdf | Peer-reviewed author version | 5.56 MB | Adobe PDF | View/Open |
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