Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31542
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dc.contributor.authorSahayaraj, S-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorVERMANG, Bart-
dc.contributor.authorSchnabel, T-
dc.contributor.authorAhlswede, E-
dc.contributor.authorHuang, Z.-
dc.contributor.authorRanjbar, S-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorVleugels, J-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2020-08-04T13:19:51Z-
dc.date.available2020-08-04T13:19:51Z-
dc.date.issued2017-
dc.date.submitted2020-07-29T13:21:02Z-
dc.identifier.citationSolar energy materials and solar cells, 171 , p. 136 -141-
dc.identifier.urihttp://hdl.handle.net/1942/31542-
dc.description.abstractThe fabrication and properties of a Ge-based Kesterite Cu2ZnGeSe4 (CZGSe) solar cell are discussed. The existence of the quaternary compound has been verified by physical methods such as X Ray Diffraction (XRD) and Energy Dispersive Spectroscopy (EDS). The Cu2ZnGeSe4 solar cell has a power conversion efficiency (PCE) of 5.5% under AM1.5G illumination which is among the highest reported for pure Ge substitution. Detailed low temperature current-voltage and time-resolved photoluminescence measurements show that the Cu2ZnGeSe4 absorber has less bulk defects and less band tailing in contrast to the typical characteristics of Cu2ZnSnSe4 devices. These beneficial opto-electronic properties also resulted in a high open circuit voltage (V-OC,) of 744 mV which is amongst the highest values reported for Kesterite Materials.-
dc.description.sponsorshipThis research is partially funded by the Flemish Government,Department Economy, Science and Innovation. This research has re-ceived funding from the European Union's Horizon 2020 Research andInnovation Program under Grant agreement no. 640868-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights2017 Elsevier B.V. All rights reserved-
dc.subject.otherKesterites-
dc.subject.otherHigh band gap-
dc.subject.otherPotential fluctuations-
dc.subject.otherBand gap fluctuations-
dc.subject.otherGe substitution-
dc.titleOptoelectronic properties of thin film Cu2ZnGeSe4 solar cells-
dc.typeJournal Contribution-
dc.identifier.epage141-
dc.identifier.spage136-
dc.identifier.volume171-
local.bibliographicCitation.jcatA1-
local.publisher.placePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.solmat.2017.06.050-
dc.identifier.isiWOS:000408298300017-
local.provider.typeWeb of Science-
item.fullcitationSahayaraj, S; BRAMMERTZ, Guy; VERMANG, Bart; Schnabel, T; Ahlswede, E; Huang, Z.; Ranjbar, S; MEURIS, Marc; Vleugels, J & POORTMANS, Jef (2017) Optoelectronic properties of thin film Cu2ZnGeSe4 solar cells. In: Solar energy materials and solar cells, 171 , p. 136 -141.-
item.fulltextWith Fulltext-
item.accessRightsRestricted Access-
item.validationecoom 2018-
item.contributorSahayaraj, S-
item.contributorBRAMMERTZ, Guy-
item.contributorVERMANG, Bart-
item.contributorSchnabel, T-
item.contributorAhlswede, E-
item.contributorHuang, Z.-
item.contributorRanjbar, S-
item.contributorMEURIS, Marc-
item.contributorVleugels, J-
item.contributorPOORTMANS, Jef-
crisitem.journal.issn0927-0248-
crisitem.journal.eissn1879-3398-
Appears in Collections:Research publications
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