Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/31543
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | BRAMMERTZ, Guy | - |
dc.contributor.author | VERMANG, Bart | - |
dc.contributor.author | ElAnzeery, H | - |
dc.contributor.author | Sahayaraj, S | - |
dc.contributor.author | Ranjbar, S | - |
dc.contributor.author | MEURIS, Marc | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.date.accessioned | 2020-08-04T13:27:38Z | - |
dc.date.available | 2020-08-04T13:27:38Z | - |
dc.date.issued | 2016 | - |
dc.date.submitted | 2020-07-29T13:19:30Z | - |
dc.identifier.citation | Thin solid films (Print), 616 , p. 649 -654 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31543 | - |
dc.description.abstract | We have fabricated and characterized Cu8SiS6 and Cu8SiSe6 thin film layers for optoelectronic applications. The layers were fabricated using a two step process by first evaporating a bilayer of Cu/Si on a Mo/glass substrate, followed by an anneal at temperatures in excess of 480 degrees C in a H2S or H2Se containing atmosphere. Different process conditions with different Cu starting layer thickness, different H2S partial pressure and different anneal temperatures and times were evaluated. The best fabricated layers were thin polycrystalline layers with a relatively low amount of secondary phases. Relatively intense photoluminescence signals with a full width at half maximum of about 150 meV could be measured on the samples with a peak position of 1.84 and 1.33 eV for the Cu8SiS6 and Cu8SiSe6 materials respectively. The absorption coefficient of the Cu8SiS6 layer was determined from absorption and reflection measurements and was larger than 10(4) cm(-1) at energies above 1.8 eV. Solar cells could not be fabricated so far, because the material appears to be very highly doped, leading to large ohmic leakage behavior in the fabricated solar cell structures. (C) 2016 Elsevier B.V. All rights reserved. | - |
dc.description.sponsorship | Samira Khelifiand Johan Lauwaert are acknowledged for the Hallmeasurements of sample A2(G). This research is partially fundedby the Flemish government, Department Economy, Science and Innova-tion. This project has received funding from the European Union'sHorizon 2020 research and innovation program under grant agreementNo 640868. B. Vermang acknowledges thefinancial support of theFlemish Research Foundation FWO (mandate 12O4215N) | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.rights | 2016 Elsevier B.V. All rights reserved.Contents lists available atScienceDirectThin Solid Filmsjournal homepage:www.elsevier.com/locate/tsf | - |
dc.subject.other | Cu8SiS6 | - |
dc.subject.other | Cu8SiSe6 | - |
dc.subject.other | Characterization | - |
dc.subject.other | Thin film layers | - |
dc.subject.other | Solar cell | - |
dc.subject.other | Photoluminescence | - |
dc.subject.other | Optoelectronics | - |
dc.title | Fabrication and characterization of ternary Cu8SiS6 and Cu8SiSe6 thin film layers for optoelectronic applications | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 654 | - |
dc.identifier.spage | 649 | - |
dc.identifier.volume | 616 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | PO BOX 564, 1001 LAUSANNE, SWITZERLAND | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
local.type.programme | H2020 | - |
local.relation.h2020 | 640868 | - |
dc.identifier.doi | 10.1016/j.tsf.2016.09.049 | - |
dc.identifier.isi | WOS:000389388600092 | - |
local.provider.type | Web of Science | - |
item.fulltext | With Fulltext | - |
item.fullcitation | BRAMMERTZ, Guy; VERMANG, Bart; ElAnzeery, H; Sahayaraj, S; Ranjbar, S; MEURIS, Marc & POORTMANS, Jef (2016) Fabrication and characterization of ternary Cu8SiS6 and Cu8SiSe6 thin film layers for optoelectronic applications. In: Thin solid films (Print), 616 , p. 649 -654. | - |
item.accessRights | Restricted Access | - |
item.contributor | BRAMMERTZ, Guy | - |
item.contributor | VERMANG, Bart | - |
item.contributor | ElAnzeery, H | - |
item.contributor | Sahayaraj, S | - |
item.contributor | Ranjbar, S | - |
item.contributor | MEURIS, Marc | - |
item.contributor | POORTMANS, Jef | - |
item.validation | ecoom 2018 | - |
crisitem.journal.issn | 0040-6090 | - |
crisitem.journal.eissn | 1879-2731 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
1-s2.0-S0040609016305739-main.pdf Restricted Access | Published version | 1.39 MB | Adobe PDF | View/Open Request a copy |
SCOPUSTM
Citations
4
checked on Sep 5, 2020
WEB OF SCIENCETM
Citations
6
checked on May 8, 2024
Page view(s)
36
checked on Sep 7, 2022
Download(s)
6
checked on Sep 7, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.