Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31557
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dc.contributor.authorSimoen, E.-
dc.contributor.authorLin, H. -C.-
dc.contributor.authorAlian, A.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorMerckling, C.-
dc.contributor.authorMitard, J.-
dc.contributor.authorClaeys, C.-
dc.date.accessioned2020-08-05T09:59:07Z-
dc.date.available2020-08-05T09:59:07Z-
dc.date.issued2013-
dc.date.submitted2020-07-31T11:39:18Z-
dc.identifier.citation2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013), IEEE,-
dc.identifier.isbn978-1-4799-0518-8-
dc.identifier.urihttp://hdl.handle.net/1942/31557-
dc.description.abstractThis paper gives an overview of measurement techniques to assess border traps in high-kappa gate dielectrics deposited on high-mobility channel materials, like Ge and InGaAs. A short description of the measurement principle and bulk oxide trap analysis will be provided for three methods, namely, low-frequency (1/f) noise, Deep-Level Transient Spectroscopy and AC transconductance dispersion. Practical application is illustrated either on metal-oxide-semiconductor capacitors or transistors, depending on the technique.-
dc.language.isoen-
dc.publisherIEEE-
dc.subject.otherborder traps-
dc.subject.otherbulk oxide traps-
dc.subject.otherDeep-Level Transient Spectroscopy-
dc.subject.otherLow-frequency noise-
dc.subject.otherAC transconductance dispersion-
dc.subject.otherOXIDE TRAPS-
dc.subject.otherINTERFACE-
dc.subject.otherNOISE-
dc.subject.otherTRANSISTORS-
dc.subject.otherSTATES-
dc.titleAnalysis of Border Traps in High-kappa Gate Dielectrics on High-Mobility Channels-
dc.typeProceedings Paper-
dc.relation.edition2013-
local.bibliographicCitation.conferencedateSEP 02-06, 2013-
local.bibliographicCitation.conferencename28th Symposium on Microelectronics Technology and Devices-
local.bibliographicCitation.conferenceplaceCuritiba, BRAZIL-
local.bibliographicCitation.jcatC1-
dc.description.notesSimoen, E (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notessimoen@imec.be-
local.publisher.place345 E 47TH ST, NEW YORK, NY 10017 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.isiWOS:000332492400071-
dc.contributor.orcidMerckling, Clement/0000-0003-3084-2543-
local.provider.typewosris-
local.bibliographicCitation.btitle2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013)-
local.uhasselt.uhpubno-
local.description.affiliation[Simoen, E.; Lin, H. -C.; Alian, A.; Brammertz, G.; Merckling, C.; Mitard, J.; Claeys, C.] IMEC, B-3001 Louvain, Belgium.-
item.fulltextNo Fulltext-
item.contributorSimoen, E.-
item.contributorLin, H. -C.-
item.contributorAlian, A.-
item.contributorBRAMMERTZ, Guy-
item.contributorMerckling, C.-
item.contributorMitard, J.-
item.contributorClaeys, C.-
item.fullcitationSimoen, E.; Lin, H. -C.; Alian, A.; BRAMMERTZ, Guy; Merckling, C.; Mitard, J. & Claeys, C. (2013) Analysis of Border Traps in High-kappa Gate Dielectrics on High-Mobility Channels. In: 2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013), IEEE,.-
item.accessRightsClosed Access-
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