Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31558
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dc.contributor.authorBuffiere, Marie-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorEl Mel, Abdel-Aziz-
dc.contributor.authorLenaers, Nick-
dc.contributor.authorRen, Yi-
dc.contributor.authorZaghi, Armin E.-
dc.contributor.authorMols, Yves-
dc.contributor.authorKoeble, Christine-
dc.contributor.authorVleugels, Jef-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2020-08-05T10:02:52Z-
dc.date.available2020-08-05T10:02:52Z-
dc.date.issued2013-
dc.date.submitted2020-07-31T11:42:16Z-
dc.identifier.citation2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), IEEE, p. 1941 -1944-
dc.identifier.isbn978-1-4799-3299-3-
dc.identifier.issn0160-8371-
dc.identifier.urihttp://hdl.handle.net/1942/31558-
dc.description.abstractTime-resolved photoluminescence analysis shows that as-grown Cu2ZnSnSe4 (CZTSe) thin films degrade when they are exposed to air. The analysis of the films prior to degradation reveals relatively long carrier lifetimes. The increase of the recombination rates significantly affects the performance of the related solar cells. Among all the chemical treatments tested to recover the lifetime of the carrier after air exposure, the KCN etching seems to be the most efficient.-
dc.language.isoen-
dc.publisherIEEE-
dc.relation.ispartofseriesIEEE Photovoltaic Specialists Conference-
dc.subject.otherCZTSe-
dc.subject.othercharge carrier lifetime-
dc.subject.othersurface properties-
dc.subject.otherthin films-
dc.subject.othersolar cells-
dc.titleRecombination Stability in Polycrystalline Cu2ZnSnSe4 Thin Films-
dc.typeProceedings Paper-
dc.relation.edition2013-
local.bibliographicCitation.conferencedateJUN 16-21, 2013-
local.bibliographicCitation.conferencename39th IEEE Photovoltaic Specialists Conference (PVSC)-
local.bibliographicCitation.conferenceplaceTampa, FL-
dc.identifier.epage1944-
dc.identifier.spage1941-
local.bibliographicCitation.jcatC1-
dc.description.notesBuffiere, M (corresponding author), Imec Partner Solliance, Kapeldreef 75, B-3001 Heverlee, Belgium.-
local.publisher.place345 E 47TH ST, NEW YORK, NY 10017 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr7-
dc.identifier.isiWOS:000340054100434-
dc.contributor.orcidVleugels, Jozef/0000-0003-4432-4675-
local.provider.typewosris-
local.bibliographicCitation.btitle2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)-
local.uhasselt.uhpubno-
local.description.affiliation[Buffiere, Marie; Brammertz, Guy; Lenaers, Nick; Ren, Yi; Zaghi, Armin E.; Mols, Yves; Meuris, Marc; Poortmans, Jef] Imec Partner Solliance, Kapeldreef 75, B-3001 Heverlee, Belgium.-
local.description.affiliation[Buffiere, Marie; Lenaers, Nick; Ren, Yi; Zaghi, Armin E.; Vleugels, Jef; Poortmans, Jef] K U Leuven, Dept Met & Mat Engn, B-3001 Heverlee, Belgium.-
local.description.affiliation[El Mel, Abdel-Aziz] Univ Mons, Res Inst Mat Sci & Engn, CIRMAP, Chimie Interact Plasma Surface ChIPS, B-7000 Mons, Belgium.-
local.description.affiliation[Koeble, Christine] Helmholtz Zentrum Berlin HZB Mat & Energie GmbH, Berlin 14109, Germany.-
item.fullcitationBuffiere, Marie; BRAMMERTZ, Guy; El Mel, Abdel-Aziz; Lenaers, Nick; Ren, Yi; Zaghi, Armin E.; Mols, Yves; Koeble, Christine; Vleugels, Jef; MEURIS, Marc & POORTMANS, Jef (2013) Recombination Stability in Polycrystalline Cu2ZnSnSe4 Thin Films. In: 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), IEEE, p. 1941 -1944.-
item.fulltextNo Fulltext-
item.contributorBuffiere, Marie-
item.contributorBRAMMERTZ, Guy-
item.contributorEl Mel, Abdel-Aziz-
item.contributorLenaers, Nick-
item.contributorRen, Yi-
item.contributorZaghi, Armin E.-
item.contributorMols, Yves-
item.contributorKoeble, Christine-
item.contributorVleugels, Jef-
item.contributorMEURIS, Marc-
item.contributorPOORTMANS, Jef-
item.accessRightsClosed Access-
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